Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation
2000 ◽
Vol 44
(11)
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pp. 1879-1885
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Keyword(s):
1998 ◽
Vol 37
(Part 2, No. 1A/B)
◽
pp. L10-L12
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2010 ◽
Vol 118
(1)
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pp. 596-603
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2014 ◽
Vol 2014
(HITEC)
◽
pp. 000058-000060
Keyword(s):
2016 ◽
Vol 16
(11)
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pp. 11635-11639
2011 ◽
Vol 98
(12)
◽
pp. 1733-1741
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2008 ◽
Vol 22
(14)
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pp. 2309-2319
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