Deep Level Transient Fourier Spectroscopy (DLTFS)—A technique for the analysis of deep level properties

1988 ◽  
Vol 31 (12) ◽  
pp. 1733-1742 ◽  
Author(s):  
S. Weiss ◽  
R. Kassing
Keyword(s):  
Deep Level ◽  
Fourier Spectroscopy

Capacitance and Current Deep-Level Transient Fourier Spectroscopy (DLTFS) for the Characterization of Defect States in Mg-Doped GaN-on-Si p+n Diodes

2021 ◽  
Vol MA2021-01 (34) ◽  
pp. 2043-2043
Author(s):  
Yoann Lechaux ◽  
Albert Minj ◽  
Laurence Méchin ◽  
Hu Liang ◽  
Karen Geens ◽  
...  
Keyword(s):  
Deep Level ◽  
Fourier Spectroscopy ◽  
Defect States ◽  
Gan On Si ◽  
Mg Doped

scholarly journals Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

2020 ◽  
Vol 36 (2) ◽  
pp. 024002
Author(s):  
Y Lechaux ◽  
A Minj ◽  
L Méchin ◽  
H Liang ◽  
K Geens ◽  
...  
Keyword(s):  
Deep Level ◽  
Fourier Spectroscopy ◽  
Defect States ◽  
Gan On Si ◽  
Mg Doped

Study on Deep Level Traps in p-HgCdTe With Dltfs

1997 ◽  
Vol 484 ◽  
Author(s):  
S. Kawata ◽  
I. Sugiyama ◽  
N. Kajihara ◽  
Y. Miyamoto
Keyword(s):  
Signal Intensity ◽  
Carrier Density ◽  
Deep Level ◽  
The Other ◽  
Fourier Spectroscopy ◽  
Cooling Cycle ◽  
Monotonic Increase ◽  
Impurity Complex ◽  
The Stability ◽  
P Type

AbstractWe studied the characteristics of deep-level traps in p-type HgCdTe diodes using the Deep Level Transient Fourier Spectroscopy (DLTFS) method. For both holes and electrons, two types of traps were observed. The DLTFS signal intensity of one type of trap increased with the carrier density in the HgCdTe, while the other did not exhibit a monotonic increase. While measuring the stability of these traps during cooling cycles, the DLTFS signal intensity of the first group was almost constant while that of the latter fluctuated with every cooling cycle. Stable traps originated from Hg vacancies, unstable traps are attributed to vacancy-impurity complex defects.

scholarly journals Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

2016 ◽  
Vol 67 (5) ◽  
pp. 377-382 ◽  
Author(s):  
Arpád Kósa ◽  
Miroslav Mikolášek ◽  
Ľubica Stuchlíková ◽  
Ladislav Harmatha ◽  
Wojciech Dawidowski ◽  
...  
Keyword(s):  
Solar Cell ◽  
Dark Current ◽  
Open Circuit Voltage ◽  
Deep Level ◽  
Open Circuit ◽  
Electrophysical Properties ◽  
Fourier Spectroscopy ◽  
Defect States ◽  
Current Voltage ◽  
Sun Light

AbstractThis paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (I–V) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined fromI–Vmeasurement at 1 and 20× sun light concentrations. Three electron like defects TAn1, TAn2, TDnand one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.

Deep Level Fourier Spectroscopy for Determination of Deep Level Parameters

1982 ◽  
Vol 21 (Part 1, No. 3) ◽  
pp. 462-466 ◽  
Author(s):  
Kousuke Ikeda ◽  
Hidetoshi Takaoka
Keyword(s):  
Deep Level ◽  
Fourier Spectroscopy

Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions

1998 ◽  
Vol 537 ◽  
Author(s):  
W.Y. Ho ◽  
W.K. Fong ◽  
Charles Surya ◽  
K.Y. Tong ◽  
L.W. Lu ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Deep Level ◽  
Power Spectra ◽  
Deep Levels ◽  
Noise Power ◽  
Hot Electron ◽  
Fourier Spectroscopy ◽  
Light Emitting ◽  
Hot Carrier ◽  
Device Properties

AbstractWe report experiments on hot-electron stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 1013 cm−3 to 4.21 × 1013 cm−3 at El = Ec – 1.1eV. The result is consistent with our study of I/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing.

Photo-Deep-Level Fourier Spectroscopy in Semi-Insulating Bulk Materials

1985 ◽  
Vol 24 (Part 1, No. 11) ◽  
pp. 1454-1458 ◽  
Author(s):  
Kousuke Ikeda ◽  
Hidetoshi Takaoka ◽  
Yoshikazu Ishii
Keyword(s):  
Deep Level ◽  
Fourier Spectroscopy ◽  
Bulk Materials

scholarly journals Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions

1999 ◽  
Vol 4 (S1) ◽  
pp. 560-564 ◽  
Author(s):  
W.Y. Ho ◽  
W.K. Fong ◽  
Charles Surya ◽  
K.Y. Tong ◽  
L.W. Lu ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Deep Level ◽  
Power Spectra ◽  
Deep Levels ◽  
Noise Power ◽  
Hot Electron ◽  
Fourier Spectroscopy ◽  
Light Emitting ◽  
Hot Carrier ◽  
Device Properties

We report experiments on hot-electron stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 1013 cm−3 to 4.21 × 1013 cm−3 at E1 = EC − 1.1eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing.

scholarly journals Reliability improvement of electrically active defect investigations by analytical and experimental deep level transient: Fourier spectroscopy investigations

2019 ◽  
Vol 70 (7) ◽  
pp. 27-35
Author(s):  
Arpad Kosa ◽  
Beata Sciana ◽  
Lubica Stuchlikova
Keyword(s):  
Reference Data ◽  
Comprehensive Evaluation ◽  
Deep Level ◽  
Fourier Spectroscopy ◽  
Alternative Evaluation ◽  
Evaluation Approach ◽  
Order Of Magnitude ◽  
Experimental Approaches ◽  
Type Statement ◽  
Calculated Activation

Abstract This article discusses the importance of analytical and experimental approaches in Deep level transient Fourier spectroscopy in terms of reliability, to support the current research and the utilization of this technique for complex investigations. An alternative evaluation approach is proposed and validated by relevant experiments. Attention is focused on a GaAs p-i-n structure, the undoped layer induced defect conduction type statement difficulty, accurate evaluation of a dual type majority-minority carrier defect complex and possible limitations of the DLTS experimental technique. Comprehensive evaluation is carried out and the method is discussed in detail. In comparison with reference data, higher precision of calculated activation energies, differences even lower as 10−3 order of magnitude, were achieved.

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