Characterization of GaN p-n diodes using deep level transient Fourier spectroscopy

2018 ◽  
pp. 345-349
Author(s):  
M Asghar ◽  
P Muret ◽  
B Beaumont ◽  
P Gibare
Keyword(s):  
Deep Level ◽  
Fourier Spectroscopy

Capacitance and Current Deep-Level Transient Fourier Spectroscopy (DLTFS) for the Characterization of Defect States in Mg-Doped GaN-on-Si p+n Diodes

2021 ◽  
Vol MA2021-01 (34) ◽  
pp. 2043-2043
Author(s):  
Yoann Lechaux ◽  
Albert Minj ◽  
Laurence Méchin ◽  
Hu Liang ◽  
Karen Geens ◽  
...  
Keyword(s):  
Deep Level ◽  
Fourier Spectroscopy ◽  
Defect States ◽  
Gan On Si ◽  
Mg Doped

scholarly journals Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

2020 ◽  
Vol 36 (2) ◽  
pp. 024002
Author(s):  
Y Lechaux ◽  
A Minj ◽  
L Méchin ◽  
H Liang ◽  
K Geens ◽  
...  
Keyword(s):  
Deep Level ◽  
Fourier Spectroscopy ◽  
Defect States ◽  
Gan On Si ◽  
Mg Doped

Growth of GaN without Yellow Luminescence

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Native Defect ◽  
Yellow Luminescence ◽  
Gallium Vacancy ◽  
Rich Condition

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

2001 ◽  
Vol 89 (2) ◽  
pp. 1172-1174 ◽  
Author(s):  
V. V. Ilchenko ◽  
S. D. Lin ◽  
C. P. Lee ◽  
O. V. Tretyak
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Self Assembled ◽  
Transient Spectroscopy

Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

2018 ◽  
Vol 124 (14) ◽  
pp. 145703 ◽  
Author(s):  
Esmat Farzana ◽  
Humberto M. Foronda ◽  
Christine M. Jackson ◽  
Towhidur Razzak ◽  
Zeng Zhang ◽  
...  
Keyword(s):  
Deep Level ◽  
Deep Level Defect

Characterization of electrically active deep level defects in 4H and 6H SiC

1997 ◽  
Vol 6 (10) ◽  
pp. 1388-1391 ◽  
Author(s):  
J.P. Doyle ◽  
M.O. Aboelfotoh ◽  
B.G. Svensson ◽  
A. Schöner ◽  
N. Nordell
Keyword(s):  
Deep Level

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

2011 ◽  
Vol 109 (6) ◽  
pp. 064514 ◽  
Author(s):  
A. F. Basile ◽  
J. Rozen ◽  
J. R. Williams ◽  
L. C. Feldman ◽  
P. M. Mooney
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capacitance Voltage ◽  
Transient Spectroscopy
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