Radiative recombination in pseudomorphic InGaAs/GaAs quantum wires grown on nonplanar substrates

1994 ◽  
Vol 37 (4-6) ◽  
pp. 1097-1100 ◽  
Author(s):  
M. Grundmann ◽  
V. Tuerck ◽  
J. Christen ◽  
E. Kapon ◽  
D.M. Hwang ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Quantum Wires

Absorption and Emission of Light in Quantum Structures

2020 ◽  
pp. 343-418
Author(s):  
Vurgaftman Igor
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Quantum Wires ◽  
Incident Light ◽  
Optical Gain ◽  
Two Dimensional ◽  
Intersubband Transitions ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Two Dimensional Materials

This chapter shows how to calculate the absorption coefficient, optical gain, and radiative recombination rates in quantum wells and superlattices. A detailed treatment of both interband and intersubband transitions is presented, and their differences and similarities are considered in detail. The optical properties of wurtzite quantum wells and zinc-blende quantum wires and dots are also discussed. Finally, the interaction of excitonic transitions with incident light in quantum wells is considered as a model for other two-dimensional materials.

Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface

2016 ◽  
Author(s):  
Minehiro Hayakawa ◽  
Yuki Hayashi ◽  
Shuhei Ichikawa ◽  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Radiative Recombination ◽  
Quantum Wires ◽  
Vicinal Surface ◽  
Recombination Probability

Iron K-Line Emission from X-Ray Binaries

1988 ◽  
Vol 102 ◽  
pp. 47-50
Author(s):  
K. Masai ◽  
S. Hayakawa ◽  
F. Nagase
Keyword(s):  
Accretion Disk ◽  
Radiative Recombination ◽  
Characteristic Temperature ◽  
Line Emission ◽  
Ionization Front ◽  
Continuum Radiation ◽  
X Ray ◽  
Low Mass ◽  
X Ray Binaries

AbstractEmission mechanisms of the iron Kα-lines in X-ray binaries are discussed in relation with the characteristic temperature Txof continuum radiation thereof. The 6.7 keV line is ascribed to radiative recombination followed by cascades in a corona of ∼ 100 eV formed above the accretion disk. This mechanism is attained for Tx≲ 10 keV as observed for low mass X-ray binaries. The 6.4 keV line observed for binary X-ray pulsars with Tx> 10 keV is likely due to fluorescence outside the He II ionization front.

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

High-field magnetoluminescence of ZnSe quantum wires

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 339-342 ◽  
Author(s):  
L Parthier
Keyword(s):  
High Field ◽  
Quantum Wires

Radiative recombination in semiconductors

1959 ◽  
Vol 68 (6) ◽  
pp. 247-260 ◽  
Author(s):  
V.S. Vavilov
Keyword(s):  
Radiative Recombination

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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