Optimizing high voltage bipolar transistors in a smart-power complementary BiCMOS technology

Solid-State Electronics ◽

10.1016/0038-1101(95)00416-5 ◽

1996 ◽

Vol 39 (8) ◽

pp. 1185-1191 ◽

Author(s):

R. Ryter ◽

R. Zingg ◽

W. Fichtner

Keyword(s):

High Voltage ◽

Bipolar Transistors ◽

Smart Power ◽

Bicmos Technology

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Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bipol.2010.5667967 ◽

2010 ◽

Author(s):

A. Delmas ◽

A. Gendron ◽

M. Bafleur ◽

N. Nolhier ◽

C. Gill

Keyword(s):

High Voltage ◽

Bipolar Transistors ◽

Smart Power ◽

Transient Voltage

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Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

10.1117/12.444659 ◽

2001 ◽

Author(s):

Giho Cha ◽

Youngchul Kim ◽

Hyungwoo Jang ◽

Hyunsoon Kang ◽

Changsub Song

Keyword(s):

High Voltage ◽

Bipolar Transistors ◽

Power Device ◽

Insulated Gate Bipolar Transistors

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High voltage RESURF LDMOS for smart power integrated circuits

Revue de Physique Appliquée ◽

10.1051/rphysap:019890024010099300 ◽

1989 ◽

Vol 24 (10) ◽

pp. 993-1000 ◽

Author(s):

G. Charitat ◽

A. Nezar ◽

P. Rossel

Keyword(s):

Integrated Circuits ◽

High Voltage ◽

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A Very High Voltage Technology (Up To 1200v) For Vertical Smart Power ICs

ECS Proceedings Volumes ◽

10.1149/198915.0517pv ◽

1989 ◽

Vol 1989-15 (1) ◽

pp. 517-525

Author(s):

Jacques P. MILLE

Keyword(s):

High Voltage ◽

Smart Power ◽

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A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV

Microelectronic Engineering ◽

10.1016/s0167-9317(00)00370-1 ◽

2000 ◽

Vol 53 (1-4) ◽

pp. 525-528

Author(s):

V. Mankowski ◽

U. Hilleringmann ◽

K. Schumacher

Keyword(s):

High Voltage ◽

Smart Power ◽

Power Switching ◽

Very High ◽

Switching Devices

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Improved Modeling of High Injection Substrate Current in High Voltage Bipolar Transistors

ECS Meeting Abstracts ◽

10.1149/ma2018-02/31/1048 ◽

2018 ◽

Keyword(s):

High Voltage ◽

Bipolar Transistors ◽

High Injection ◽

Substrate Current

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'Merged' technologies: present capabilities and value for applications in high-voltage and 'smart power' circuitry

IEEE Transactions on Industry Applications ◽

10.1109/28.62398 ◽

1990 ◽

Vol 26 (6) ◽

pp. 1124-1130 ◽

Author(s):

P.R. Emerald

Keyword(s):

High Voltage ◽

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The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology

Solid-State Electronics ◽

10.1016/j.sse.2017.03.010 ◽

2017 ◽

Vol 132 ◽

pp. 80-85

Author(s):

Ying-Chieh Tsai ◽

Jeng Gong ◽

Wing-Chor Chan ◽

Shyi-Yuan Wu ◽

Chenhsin Lien

Keyword(s):

High Temperature ◽

High Voltage ◽

Bipolar Transistors ◽

Insulated Gate Bipolar Transistors ◽

Dc Characteristics

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New product applications: IC op amp combines high-voltage JFETs with standard bipolar transistors on one chip

IEEE Spectrum ◽

10.1109/mspec.1975.6368750 ◽

1975 ◽

Vol 12 (10) ◽

pp. 83-89

Keyword(s):

High Voltage ◽

New Product ◽

Bipolar Transistors ◽

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0.4μm high voltage CMOS smart power technology: 120V LD NMOS for integrated system on chip applications

10.1117/12.926994 ◽

2012 ◽

Author(s):

Nayan Patel

Keyword(s):

High Voltage ◽

System On Chip ◽

Integrated System ◽

Smart Power ◽

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