The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology

2017 ◽  
Vol 132 ◽  
pp. 80-85
Author(s):  
Ying-Chieh Tsai ◽  
Jeng Gong ◽  
Wing-Chor Chan ◽  
Shyi-Yuan Wu ◽  
Chenhsin Lien
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Dc Characteristics

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

2001 ◽  
Author(s):  
Giho Cha ◽  
Youngchul Kim ◽  
Hyungwoo Jang ◽  
Hyunsoon Kang ◽  
Changsub Song
Keyword(s):  
High Voltage ◽  
Bipolar Transistors ◽  
Power Device ◽  
Insulated Gate Bipolar Transistors

Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors

2015 ◽  
Vol 118 (8) ◽  
pp. 085702 ◽  
Author(s):  
Tetsuya Miyazawa ◽  
Koji Nakayama ◽  
Atsushi Tanaka ◽  
Katsunori Asano ◽  
Shi-yang Ji ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Voltage ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Very High
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