Structural determination of indium oxide thin films on polyester substrates by transmission electron microscopy

1979 ◽  
Vol 62 (1) ◽  
pp. 19-23 ◽  
Author(s):  
J.E. Morris ◽  
C.A. Bishop ◽  
M.I. Ridge ◽  
R.P. Howson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Indium Oxide ◽  
Structural Determination ◽  
Oxide Thin Films ◽  
Transmission Electron

Transmission Electron Microscopy Studies of Tin Oxide Thin Films Grown on the Sapphire Substrate

1998 ◽  
Vol 4 (S2) ◽  
pp. 622-623
Author(s):  
L. Fu ◽  
X. Pan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Sapphire Substrate ◽  
Tin Oxide ◽  
Tin Dioxide ◽  
High Ratio ◽  
Crystal Defects ◽  
Oxide Thin Films ◽  
Transmission Electron

Tin dioxide (SnO2) with rutile type structure exhibits unique electronic and optical properties. In applications of this material as gas sensors, a film-type of SnO2 provides high ratio of surface area to volume and lead to high sensitivity and fast responses. It has been found that substrate material, deposition conditions, and annealing procedure may directly control the microstructure of thin films, hence control gas-sensing properties. In this paper, we present transmission electron microscopy (TEM) studies of the microstructure and crystal defects of tin oxide thin films on sapphire substrate with subsequent annealing at high temperatures.Tin oxide thin films were deposited on the surface of sapphire by e-beam evaporation of high purity SnO2 (99.999%) at 350°C followed by annealing in air at 600°C - 700°C. Microstructures of the films were characterized by X-ray diffraction (XRD) and TEM techniques.

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