Some thermally stimulated current spectra from CdSe thin film transistors

1980 ◽  
Vol 74 (2) ◽  
pp. 179-188 ◽  
Author(s):  
K.H. Norian
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Thermally Stimulated Current ◽  
Cdse Thin Film

Forming ohmic contacts in CdSe thin‐film transistors by dc sputter etching

1982 ◽  
Vol 41 (6) ◽  
pp. 552-554
Author(s):  
F. C. Luo ◽  
E. C. Freeman ◽  
J. H. Slowik ◽  
M. Poleshuk
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Ohmic Contacts ◽  
Cdse Thin Film ◽  
Sputter Etching

Back-surface passivation of polycrystalline CdSe thin-film transistors

1998 ◽  
Vol 16 (2) ◽  
pp. 834-837 ◽  
Author(s):  
D. Landheer ◽  
D. P. Masson ◽  
S. Belkouch ◽  
S. R. Das ◽  
T. Quance ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Back Surface ◽  
Cdse Thin Film

P-33: High-Mobility CdSe Thin-Film Transistors and Circuits by Sol-gel Method

2017 ◽  
Vol 48 (1) ◽  
pp. 1350-1352 ◽  
Author(s):  
Sung Min Kwon ◽  
Myung Gil Kim ◽  
Su Min Jung ◽  
Sung Kyu Park
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
High Mobility ◽  
Gel Method ◽  
Sol Gel Method ◽  
Cdse Thin Film

Effect of ion implantation on CdSe thin film transistors

1981 ◽  
Vol 18 (3) ◽  
pp. 899-902 ◽  
Author(s):  
F. R. Shepherd ◽  
W. D. Westwood ◽  
P. J. Scanlon ◽  
J. Levinson ◽  
I. V. Mitchell ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Thin Film Transistors ◽  
Cdse Thin Film

Electrical transport properties of CdSe thin-film transistors with Cr contacts

1991 ◽  
Vol 69 (3-4) ◽  
pp. 229-235
Author(s):  
David Waechter ◽  
Graham Leith ◽  
Stefan Zukotynski
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Gate Voltage ◽  
Electrical Transport ◽  
Thin Film Transistors ◽  
Critical Distance ◽  
Electrical Transport Properties ◽  
Cdse Thin Film ◽  
Potential Barriers ◽  
Hall Effect Measurements

Electrical transport properties of CdSe thin-film transistors have been examined as a function of lateral distance from Cr contacts. The results show that the channel conductivity is enhanced in the vicinity of the contacts and drops sharply at a critical distance. The magnitude of this distance is sensitive to the surface treatment prior to CdSe deposition. Hall-effect measurements show an increasing electron mobility with increasing gate voltage, consistent with gate-voltage-induced lowering of grain-boundary potential barriers.

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