Influence of the individual layer thickness on the depth resolution determined in sputter depth profiling of multilayers

1987 ◽  
Vol 146 (2) ◽  
pp. L11-L14 ◽  
Author(s):  
D. Marton
2004 ◽  
Vol 443-444 ◽  
pp. 193-196 ◽  
Author(s):  
M. Hecker ◽  
N. Mattern ◽  
W. Brückner ◽  
C.M. Schneider

The subject of the present investigation is the influence of annealing on the microstructure of Co thin films. In particular, the evolution of the texture during annealing is studied and compared with that of Co/Cu multilayers of different individual layer thicknesses. 400nm thick Co films show a h.c.p. structure with a weak preference of the <001> texture component and a broad distribution of grain orientations. Annealing at about 350°C results in a strong increase of the h.c.p. <001> component, nearly complete disappearance of the statistical distribution and grain growth of a minor f.c.c. fraction in the films. In-situ XRD measurements on single Co films during annealing confirm that the texture change is irreversible. Multilayer stacks of Co/Cu layers show various texture changes depending on the individual layer thickness (ranging between 100nm and 1nm). Generally, with decreasing individual layer thickness and increasing annealing temperature the f.c.c. content in the multilayers increases at the expense of the h.c.p. fraction.


Materialia ◽  
2019 ◽  
Vol 7 ◽  
pp. 100400 ◽  
Author(s):  
A.V. Druzhinin ◽  
D. Ariosa ◽  
S. Siol ◽  
N. Ott ◽  
B.B. Straumal ◽  
...  

2012 ◽  
Vol 621 ◽  
pp. 23-26
Author(s):  
Wei Rao ◽  
Ding Guo Li ◽  
Hong Chun Yan

Ba0.8Sr0.2TiO3 thin films were prepared with various individual layer thicknesses using a sol– gel process. The individual layer thickness strongly affected the structure, ferroelectricity, and dielectric properties of the films. The films prepared with an individual layer thickness of 60 nm showed small equiaxed grains, cubic structure, temperature-independent dielectric constant, and no ferroelectricity. The films prepared with an individual layer thickness of 8 nm showed columnar grains, tetragonal structure, good ferroelectricity, and two dielectric peaks in the dielectric constant–temperature curve. The individual layer thickness for layer-by-layer homoepitaxy growth that resulted in columnar grains was <20 nm.


2005 ◽  
Vol 20 (8) ◽  
pp. 2046-2054 ◽  
Author(s):  
A. Misra ◽  
R.G. Hoagland

We investigated the effects of elevated temperature vacuum annealing on the morphological stability and hardness of self-supported, textured, polycrystalline Cu–Nb nanolayered films with individual layer thickness varying from 15 to 75 nm. Films with layer thickness greater than approximately 35 nm are found to resist layer pinch-off and spheroidization even after long annealing times at 700 °C, while films with layer thickness ∼15 nm exhibit layer pinch-off and evolve into an equiaxed grain microstructure. Nanoindentation measurements indicate almost no change in hardness after annealing for films that retain the layered morphology, in spite of the increase of in-plane grain dimensions. Significant decreases in hardness are noted for films that develop a coarsened equiaxed grain microstructure after annealing. The mechanism that leads to the development of a thermally stable nanolayered structure is analyzed. Also, the relative effects of in-plane grain size and layer thickness on the multilayer hardness are discussed.


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