Effects of Individual Layer Thickness on the Microstructure and Optoelectronic Properties of Sol–Gel-Derived Zinc Oxide Thin Films

2008 ◽  
Vol 91 (3) ◽  
pp. 846-851 ◽  
Author(s):  
Noureddine Bel Hadj Tahar ◽  
Radhouane Bel Hadj Tahar ◽  
Abdelhamid Ben Salah ◽  
André Savall
2004 ◽  
Vol 83 (10) ◽  
pp. 2616-2618 ◽  
Author(s):  
Jian-Gong Cheng ◽  
Xiang-Jian Meng ◽  
Jun Tang ◽  
Shao-Ling Guo ◽  
Jun-Hao Chu ◽  
...  

2012 ◽  
Vol 621 ◽  
pp. 23-26
Author(s):  
Wei Rao ◽  
Ding Guo Li ◽  
Hong Chun Yan

Ba0.8Sr0.2TiO3 thin films were prepared with various individual layer thicknesses using a sol– gel process. The individual layer thickness strongly affected the structure, ferroelectricity, and dielectric properties of the films. The films prepared with an individual layer thickness of 60 nm showed small equiaxed grains, cubic structure, temperature-independent dielectric constant, and no ferroelectricity. The films prepared with an individual layer thickness of 8 nm showed columnar grains, tetragonal structure, good ferroelectricity, and two dielectric peaks in the dielectric constant–temperature curve. The individual layer thickness for layer-by-layer homoepitaxy growth that resulted in columnar grains was <20 nm.


2019 ◽  
Vol 775 ◽  
pp. 466-473 ◽  
Author(s):  
A.R. Nimbalkar ◽  
N.B. Patil ◽  
V.V. Ganbavle ◽  
S.V. Mohite ◽  
K.V. Madhale ◽  
...  

2012 ◽  
Vol 121 (1) ◽  
pp. 217-220 ◽  
Author(s):  
M.S. Kim ◽  
K.G. Yim ◽  
S. Kim ◽  
G. Nam ◽  
D.Y. Lee ◽  
...  

2005 ◽  
Vol 40 (19) ◽  
pp. 5285-5289 ◽  
Author(s):  
Radhouane Bel Hadj Tahar ◽  
Noureddine Bel Hadj Tahar

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