Stability of structural defects of polycrystalline silicon grown by rapid thermal annealing of amorphous silicon films

1995 ◽  
Vol 268 (1-2) ◽  
pp. 1-4 ◽  
Author(s):  
D. Girginoudi ◽  
S. Girginoudi ◽  
A. Thanailakis ◽  
N. Georgoulas ◽  
J. Stoemenos ◽  
...  
1997 ◽  
Vol 12 (10) ◽  
pp. 2511-2514 ◽  
Author(s):  
G. D. Beshkov ◽  
D. B. Dimitrov ◽  
V. Lazarova ◽  
J. Koprinarova ◽  
K. Gesheva ◽  
...  

In this work the properties of polycrystalline silicon layers obtained by rapid thermal annealing have been discussed. Amorphous silicon layers with thickness of 3000 Å have been deposited on silicon wafers in rf sputtering system. The layers were annealed for 15 s to 5 min at temperatures in the range 800–1200 °C in vacuum 5 × 10−5 Torr. A correlation was established between structure, morphology, sheet resistance, and the parameters of the RTA annealing.


1994 ◽  
Vol 37-38 ◽  
pp. 287-292 ◽  
Author(s):  
J. Stoemenos ◽  
N.A. Economou ◽  
L. Haji ◽  
M. Bonnel ◽  
N. Duhamel ◽  
...  

2000 ◽  
Vol 39 (Part 2, No. 1A/B) ◽  
pp. L19-L21 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Chun-Yao Huang ◽  
Fang-Shing Wang ◽  
Kuen-Hsien Lin ◽  
Fu-Gow Tarntair

1998 ◽  
Vol 135 (1-4) ◽  
pp. 205-208 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Zhixun Ma ◽  
Guozhen Yue ◽  
Hongwei Diao ◽  
...  

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2150-2154 ◽  
Author(s):  
Jin-Wook Seo ◽  
Yoshitaka Kokubo ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  

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