252. The mechanism of surface mass transport in the thin-film system Ge-Al

Vacuum ◽  
1974 ◽  
Vol 24 (3) ◽  
pp. 141
2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Y. B. Xu ◽  
Y. L. Tang ◽  
Y. L. Zhu ◽  
Y. Liu ◽  
S. Li ◽  
...  

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.


2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park

2015 ◽  
Vol 589 ◽  
pp. 173-181 ◽  
Author(s):  
A. Tynkova ◽  
G.L. Katona ◽  
G. Erdélyi ◽  
L. Daróczi ◽  
А.I. Oleshkevych ◽  
...  

2018 ◽  
Vol 33 (22) ◽  
pp. 3880-3889 ◽  
Author(s):  
Mohd. Shkir ◽  
Mohd. Arif ◽  
Vanga Ganesh ◽  
Mohamed A. Manthrammel ◽  
Arun Singh ◽  
...  

Abstract


Author(s):  
Yu.N. Makogon ◽  
O.P. Pavlova ◽  
G. Beddies ◽  
A.V. Mogilatenko ◽  
O.V. Chukhrai

2020 ◽  
Vol 153 (1) ◽  
pp. 014707
Author(s):  
Swati Kumari ◽  
João R. C. Junqueira ◽  
Suchismita Sarker ◽  
Apurva Mehta ◽  
Wolfgang Schuhmann ◽  
...  

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