Measurement of the lifetime and quenching rate of metastable 2S muonic helium ions

1984 ◽  
Vol 136 (4) ◽  
pp. 232-236 ◽  
Author(s):  
H.P. von Arb ◽  
F. Dittus ◽  
H. Heeb ◽  
H. Hofer ◽  
F. Kottmann ◽  
...  
Keyword(s):  
2002 ◽  
Vol 67 (8) ◽  
pp. 1154-1164 ◽  
Author(s):  
Nachiappan Radha ◽  
Meenakshisundaram Swaminathan

The fluorescence quenching of 2-aminodiphenylamine (2ADPA), 4-aminodiphenylamine (4ADPA) and 4,4'-diaminodiphenylamine (DADPA) with tetrachloromethane, chloroform and dichloromethane have been studied in hexane, dioxane, acetonitrile and methanol as solvents. The quenching rate constants for the process have also been obtained by measuring the lifetimes of the fluorophores. The quenching was found to be dynamic in all cases. For 2ADPA and 4ADPA, the quenching rate constants of CCl4 and CHCl3 depend on the viscosity, whereas in the case of CH2Cl2, kq depends on polarity. The quenching rate constants for DADPA with CCl4 are viscosity-dependent but the quenching with CHCl3 and CH2Cl2 depends on the polarity of the solvents. From the results, the quenching mechanism is explained by the formation of a non-emissive complex involving a charge-transfer interaction between the electronically excited fluorophores and ground-state chloromethanes.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.


Nano Letters ◽  
2021 ◽  
Vol 21 (7) ◽  
pp. 2989-2996
Author(s):  
Roméo Juge ◽  
Kaushik Bairagi ◽  
Kumari Gaurav Rana ◽  
Jan Vogel ◽  
Mamour Sall ◽  
...  

2001 ◽  
Vol 115 (7) ◽  
pp. 3144-3154 ◽  
Author(s):  
N. Sadeghi ◽  
D. W. Setser ◽  
A. Francis ◽  
U. Czarnetzki ◽  
H. F. Döbele

1979 ◽  
Vol 69 (5) ◽  
pp. 356-359 ◽  
Author(s):  
S.D. Mukherjee ◽  
D.W. Palmer

1992 ◽  
Vol 12 (2-3) ◽  
pp. 137-145 ◽  
Author(s):  
M. Durante ◽  
G. Grossi ◽  
T.C. Yang ◽  
R. Roots

Computation ◽  
2018 ◽  
Vol 6 (1) ◽  
pp. 19
Author(s):  
Xinghao Liang ◽  
Yang Li ◽  
Qiang Zhao ◽  
Zheng Zhang ◽  
Xiaoping Ouyang

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