Influence of an external electric field on the motion of a ferroelectric domain wall

1985 ◽  
Vol 109 (8) ◽  
pp. 389-392 ◽  
Author(s):  
J. Pouget ◽  
G.A. Maugin
2018 ◽  
Vol 9 ◽  
pp. 2356-2360 ◽  
Author(s):  
Vilgelmina Stepkova ◽  
Jiří Hlinka

The phase-field simulations of ferroelectric Bloch domain walls in BaTiO3–SrTiO3 crystalline superlattices performed in this study suggest that a paraelectric layer with a thickness comparable to the thickness of the domain wall itself can act as an efficient pinning layer. At the same time, such a layer facilitates the possibility to switch domain wall helicity by an external electric field or even to completely change the characteristic structure of a ferroelectric Bloch wall passing through it. Thus, ferroelectric Bloch domain walls are shown to be ideal nanoscale objects with switchable properties. The reported results hint towards the possibility to exploit ferroelectric domain wall interaction with simple nanoscale devices.


2011 ◽  
Vol 328-330 ◽  
pp. 1157-1160
Author(s):  
Jing Wu ◽  
Wen Fang Li

This paper carries out the research on the critical conditions of ferroelectric domain switch with different porosity and pressure. A micromechanics model is established with the influence of external electric field, stress load, domain wall energy and depolarization energy, etc. The results show that the domain switch critical dimension and nucleation energy decrease fastly in the initial stage and then decrease slowly as the reversed electric field evenly increases. The critical dimension and nucleation energy with different porosity and pressure are studied, too.


2021 ◽  
Author(s):  
Jing Wang ◽  
Jing Ma ◽  
Houbing Huang ◽  
Ji Ma ◽  
Hasnain Jafri ◽  
...  

Abstract The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.


2021 ◽  
pp. 2100646
Author(s):  
Huajun Qin ◽  
Rouven Dreyer ◽  
Georg Woltersdorf ◽  
Tomoyasu Taniyama ◽  
Sebastiaan van Dijken

2018 ◽  
Vol 189 (02) ◽  
pp. 187-194 ◽  
Author(s):  
Nikita V. Marchenkov ◽  
Anton G. Kulikov ◽  
Ivan I. Atknin ◽  
Arsen A. Petrenko ◽  
Alexander E. Blagov ◽  
...  

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