scholarly journals Pinning of a ferroelectric Bloch wall at a paraelectric layer

2018 ◽  
Vol 9 ◽  
pp. 2356-2360 ◽  
Author(s):  
Vilgelmina Stepkova ◽  
Jiří Hlinka
Keyword(s):  
Domain Wall ◽  
Electric Field ◽  
External Electric Field ◽  
Phase Field ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Bloch Wall ◽  
Nanoscale Devices ◽  
Characteristic Structure ◽  
Wall Interaction

The phase-field simulations of ferroelectric Bloch domain walls in BaTiO3–SrTiO3 crystalline superlattices performed in this study suggest that a paraelectric layer with a thickness comparable to the thickness of the domain wall itself can act as an efficient pinning layer. At the same time, such a layer facilitates the possibility to switch domain wall helicity by an external electric field or even to completely change the characteristic structure of a ferroelectric Bloch wall passing through it. Thus, ferroelectric Bloch domain walls are shown to be ideal nanoscale objects with switchable properties. The reported results hint towards the possibility to exploit ferroelectric domain wall interaction with simple nanoscale devices.

Ferroelectric domain-wall logic units

2021 ◽  
Author(s):  
Jing Wang ◽  
Jing Ma ◽  
Houbing Huang ◽  
Ji Ma ◽  
Hasnain Jafri ◽  
...  
Keyword(s):  
Domain Wall ◽  
Electric Field ◽  
Domain Walls ◽  
Logic Gates ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Domain ◽  
Conduction Path ◽  
Conductive Atomic Force Microscopy ◽  
Flexible Control ◽  
Force Microscopy

Abstract The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.

scholarly journals Calibration of material parameters based on 180$$^\circ $$ and 90$$^\circ $$ ferroelectric domain wall properties in Ginzburg–Landau–Devonshire phase field models

2020 ◽  
Vol 90 (12) ◽  
pp. 2755-2774
Author(s):  
Moritz Flaschel ◽  
Laura De Lorenzis
Keyword(s):  
Domain Wall ◽  
Phase Field ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Ginzburg Landau ◽  
Closed Form Solutions ◽  
Material Parameters ◽  
Phase Field Models ◽  
Mobility Parameter ◽  
The Relationship

Abstract Ferroelectric phase field models based on the Ginzburg–Landau–Devonshire theory are characterized by a large number of material parameters with problematic physical interpretation. In this study, we systematically address the relationship between these parameters and the main properties of ferroelectric domain walls. A variational approach is used to derive closed form solutions for the polarization fields at the phase transition regions as well as for the propagation velocities of the domain walls. Introducing a modified set of material parameters, which appropriately scales different contributions to the free energy, we are able to accurately calibrate these parameters based on domain wall thickness and energy of both 180$$^\circ $$ ∘ and 90$$^\circ $$ ∘ domain walls. Moreover, the mobility parameter appearing in the Ginzburg–Landau evolution equation can be accurately calibrated based on the propagation velocity of the domain walls.

The Critical Conditions of Ferroelectric Domain Switch with Different Porosity and Pressure

2011 ◽  
Vol 328-330 ◽  
pp. 1157-1160
Author(s):  
Jing Wu ◽  
Wen Fang Li
Keyword(s):  
Domain Wall ◽  
Electric Field ◽  
External Electric Field ◽  
Critical Dimension ◽  
Ferroelectric Domain ◽  
Critical Conditions ◽  
Stress Load ◽  
Domain Wall Energy ◽  
Initial Stage ◽  
Domain Switch

This paper carries out the research on the critical conditions of ferroelectric domain switch with different porosity and pressure. A micromechanics model is established with the influence of external electric field, stress load, domain wall energy and depolarization energy, etc. The results show that the domain switch critical dimension and nucleation energy decrease fastly in the initial stage and then decrease slowly as the reversed electric field evenly increases. The critical dimension and nucleation energy with different porosity and pressure are studied, too.

Application of electron holography to ferroelectric study

1993 ◽  
Vol 51 ◽  
pp. 1092-1093
Author(s):  
X. Zhang ◽  
D. C. Joy ◽  
L. F. Allard ◽  
T. A. Nolan
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Electron Holography ◽  
Local Domain ◽  
Holographic Method ◽  
Wall Area ◽  
Weak Phase ◽  
Wall Structures ◽  
Essential Input

With the development of FE TEM, electron holography becomes a reality to materials scientists, which opens a new window for materials study. Weak phase objects, such as a thin transparent specimen or an electric or a magnetic field, which have little or no effect on the intensity of the transmitted wave, can readily be observed via holography because of the phase shift that they produce. Application of the electron holographic method has been extended to the study of ferroelectric domain wall structures. This work presents the most recent results in this area.Polarization gradients within domain walls are extremely important for the understanding of the extrinsic elastio-dielectric properties of ferroelectrics. Electron holographic studies of the local domain wall profiles provide essential input parameters for phenomenological theories of domain structure and of the macroscopic properties derived from the theories. Figure 1(a) is an electron hologram of the ferroelectric (BaTiO3) 90° domain wall area.

Fundamental Properties of Ferroelectric Domain Walls from Ginzburg–Landau Models

Domain Walls ◽  
2020 ◽  
pp. 76-108
Author(s):  
P. Ondrejkovic ◽  
P. Marton ◽  
V. Stepkova ◽  
J. Hlinka
Keyword(s):  
Lead Zirconate Titanate ◽  
Phase Field ◽  
Domain Walls ◽  
Original Data ◽  
Lead Zirconate ◽  
Relaxor Ferroelectrics ◽  
Ferroelectric Domain ◽  
Ginzburg Landau ◽  
Fundamental Properties ◽  
Ferroelectric Oxides

This chapter discusses the contemporary possibilities, prospects, and limitations of phase-field simulations and Ginzburg-Landau-Devonshire models of DWs. It focuses on the most studied ferroelectric oxides BaTiO3, KNbO3, PbTiO3, as well as in various complex perovskite oxides like lead zirconate titanate (PZT) and lead-based relaxor ferroelectrics. In the past decade, there have been multiple important results published in the field of perovskite ferroelectrics with a support of phase-field simulations. Certain predictions, like existence of Bloch walls in BaTiO3 or vortex structures in PbTiO3-SrTiO3 superlattices have been verified by atomistic or ab-initio calculations. The chapter resumes their available model potentials and the key predictions reported in the last decade. It is complemented by original data allowing comparisons and an outlook.

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