Some views concerning the absorbed dose in the gamma-ray irradiation of traditional chinese medicines and staple crops

Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to the negative voltage side, and the leakage of drain current at gate voltages below threshold voltage increased with increasing absorbed dose. However, no significant change in the electrical characteristics of SiC MOSFETs was observed at doses above 1.2 MGy. For blocking characteristics, there were no degradations of the SiC MOSFETs irradiated at 150°C even after irradiated at 10.4 MGy.

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ВЛИЯНИЕ ПРЕДВАРИТЕЛЬНОГО ОБЛУЧЕНИЯ ГАММА-КВАНТАМИ НА ОДИНОЧНЫЕ СБОИ В МИКРОСХЕМАХ ПАМЯТИ, ВОЗНИКАЮЩИЕ ПРИ ВОЗДЕЙСТВИИ НЕЙТРОНОВ ЭНЕРГИИ 14 МЭВ

Nanoindustry Russia ◽

10.22184/1993-8578.2020.13.3s.187.189 ◽

2020 ◽

Vol 96 (3s) ◽

pp. 187-189

Author(s):

В.П. Шукайло ◽

О.В. Ткачев ◽

А.С. Кустов ◽

К.Д. Какшарова

Keyword(s):

Dose Level ◽

Cross Section ◽

Gamma Rays ◽

Gamma Ray ◽

Absorbed Dose ◽

Single Event ◽

Single Event Upsets ◽

Dielectric Layers ◽

Gamma Ray Irradiation ◽

Preliminary Irradiation

Исследовано влияние предварительного облучения гамма-квантами на сечение одиночных событий (ОС) в СОЗУ при воздействии нейтронов с энергией 14 МэВ. Показано, что с увеличением уровня предварительного облучения гамма-квантами сечение ОС возрастает. Рост сечения от величины поглощенной дозы обусловлен накоплением зарядов в диэлектрических слоях интегральной микросхемы. The paper explores the influence of a preliminary gamma ray irradiation on single event upsets (SEU) in SRAM at 14 MeV neutrons influence. It has been shown that there is an increase in SEU cross section with an increase of level of preliminary irradiation by gamma rays. The increase of cross section from absorbed dose level depends on accumulation of charges in dielectric layers of integrated microcircuit.

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Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation

International Journal of Photoenergy ◽

10.1155/2013/158403 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 6

Author(s):

Milić Pejović ◽

Olivera Ciraj-Bjelac ◽

Milojko Kovačević ◽

Zoran Rajović ◽

Gvozden Ilić

Keyword(s):

Threshold Voltage ◽

Gamma Ray ◽

Dose Range ◽

Absorbed Dose ◽

Tube Voltage ◽

Threshold Voltage Shift ◽

X Ray ◽

Practical Applications ◽

Most Significant Change ◽

Gamma Ray Irradiation

Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of 60Co in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5 V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.

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