ВЛИЯНИЕ ПРЕДВАРИТЕЛЬНОГО ОБЛУЧЕНИЯ ГАММА-КВАНТАМИ НА ОДИНОЧНЫЕ СБОИ В МИКРОСХЕМАХ ПАМЯТИ, ВОЗНИКАЮЩИЕ ПРИ ВОЗДЕЙСТВИИ НЕЙТРОНОВ ЭНЕРГИИ 14 МЭВ

2020 ◽  
Vol 96 (3s) ◽  
pp. 187-189
Author(s):  
В.П. Шукайло ◽  
О.В. Ткачев ◽  
А.С. Кустов ◽  
К.Д. Какшарова
Keyword(s):  
Dose Level ◽  
Cross Section ◽  
Gamma Rays ◽  
Gamma Ray ◽  
Absorbed Dose ◽  
Single Event ◽  
Single Event Upsets ◽  
Dielectric Layers ◽  
Gamma Ray Irradiation ◽  
Preliminary Irradiation

Исследовано влияние предварительного облучения гамма-квантами на сечение одиночных событий (ОС) в СОЗУ при воздействии нейтронов с энергией 14 МэВ. Показано, что с увеличением уровня предварительного облучения гамма-квантами сечение ОС возрастает. Рост сечения от величины поглощенной дозы обусловлен накоплением зарядов в диэлектрических слоях интегральной микросхемы. The paper explores the influence of a preliminary gamma ray irradiation on single event upsets (SEU) in SRAM at 14 MeV neutrons influence. It has been shown that there is an increase in SEU cross section with an increase of level of preliminary irradiation by gamma rays. The increase of cross section from absorbed dose level depends on accumulation of charges in dielectric layers of integrated microcircuit.

Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature

2016 ◽  
Vol 858 ◽  
pp. 860-863 ◽  
Author(s):  
Takuma Matsuda ◽  
Takashi Yokoseki ◽  
Satoshi Mitomo ◽  
Koichi Murata ◽  
Takahiro Makino ◽  
...  
Keyword(s):  
Field Effect ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Absorbed Dose ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Radiation Response ◽  
Electrical Characteristics ◽  
Gamma Ray Irradiation

Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to the negative voltage side, and the leakage of drain current at gate voltages below threshold voltage increased with increasing absorbed dose. However, no significant change in the electrical characteristics of SiC MOSFETs was observed at doses above 1.2 MGy. For blocking characteristics, there were no degradations of the SiC MOSFETs irradiated at 150°C even after irradiated at 10.4 MGy.

scholarly journals Gamma Ray-Induced Polymerization and Cross-Linking for Optimization of PPy/PVP Hydrogel as Biomaterial

Polymers ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 111 ◽  
Author(s):  
Jin-Oh Jeong ◽  
Jong-Seok Park ◽  
Young-Ah Kim ◽  
Su-Jin Yang ◽  
Sung-In Jeong ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Cell Viability ◽  
Gamma Rays ◽  
Biomedical Applications ◽  
Gamma Ray ◽  
The Other ◽  
Cross Linking ◽  
Gamma Ray Irradiation ◽  
Good Cell ◽  
Scanning Electron

Conducting polymer (CP)-based hydrogels exhibit the behaviors of bending or contraction/relaxation due to electrical stimulation. They are similar in some ways to biological organs and have advantages regarding manipulation and miniaturization. Thus, these hydrogels have attracted considerable interest for biomedical applications. In this study, we prepared PPy/PVP hydrogel with different concentrations and content through polymerization and cross-linking induced by gamma-ray irradiation at 25 kGy to optimize the mechanical properties of the resulting PPy/PVP hydrogel. Optimization of the PPy/PVP hydrogel was confirmed by characterization using scanning electron microscopy, gel fraction, swelling ratio, and Fourier transform infrared spectroscopy. In addition, we assessed live-cell viability using live/dead assay and CCK-8 assay, and found good cell viability regardless of the concentration and content of Py/pTS. The conductivity of PPy/PVP hydrogel was at least 13 mS/cm. The mechanical properties of PPy/PVP hydrogel are important factors in their application for biomaterials. It was found that 0.15PPy/PVP20 (51.96 ± 6.12 kPa) exhibited better compressive strength than the other samples for use in CP-based hydrogels. Therefore, it was concluded that gamma rays can be used to optimize PPy/PVP hydrogel and that biomedical applications of CP-based hydrogels will be possible.

scholarly journals Study on Induced Current of Iron Plate Irradiated by Pulsed Gamma Rays

2018 ◽  
Vol 53 ◽  
pp. 01007
Author(s):  
Yinghong Zuo ◽  
Maoyu Zhang ◽  
Guoxin Cheng ◽  
Shengli Niu
Keyword(s):  
Gamma Rays ◽  
Gamma Ray ◽  
Transient Current ◽  
Current Response ◽  
Induced Current ◽  
Metal Component ◽  
Iron Plate ◽  
Gamma Ray Irradiation ◽  
Charge Deposition ◽  
The Relationship

To obtain the transient current response law of the metal component irradiated by pulsed gamma rays, the pulsed gamma ray irradiation experiment of the iron plate was carried out on “Qiangguang-I” accelerator. The transient current of iron plate generated by pulsed gamma rays was measured and analysed, and the relationship between the amplitude of pulse current and the dose rate of gamma rays was obtained. The results show that the current response sensitivity of the iron plate is about 5.7×10-7(A/m2)/(Gy/s) when the gamma rays with the energy of 0.8 MeV irradiate the iron plate. The charge deposition rate in the iron plate can be obtained by Monte Carlo simulation, and then it can be converted to gamma ray induced current of the metal component irradiated by gamma rays.

Radiation induced degradation of murexide dye in two media for possible use in dosimetric applications

2019 ◽  
Vol 48 (6) ◽  
pp. 540-546 ◽  
Author(s):  
Sameh Mohamed Gafar ◽  
Nehad Magdy Abdel-Kader
Keyword(s):  
Gamma Rays ◽  
Gamma Ray ◽  
Absorbed Dose ◽  
Chemical Yield ◽  
Radiation Sensitivity ◽  
Industrial Applications ◽  
Food Irradiation ◽  
Radiation Chemical ◽  
Content Type ◽  
Wide Range

Purpose The purpose of this paper is to study the effect of gamma-rays on murexide (Mx) dye and its possible use as radiation dosimeters in two different dosimetry systems. The first system depends on the Mx dye as a liquid dosimeter. The second dosimetry system depends also on the same dye but as in a gel form, which is more sensitive to gamma-rays. Design/methodology/approach The prepared Mx (solutions/gels) have a considerable two peaks at 324 and 521 nm that upon irradiation, the intensity of these peaks decreases with the increasing radiation dose. Findings The gamma-ray absorbed dose for these dosimeters was found to be up to 2 kGy for the solution samples and 40 Gy for the gels. Radiation chemical yield, dose response function, radiation sensitivity and before and after-irradiation stability under various conditions were discussed and studied. Practical implications It is expected that the radiolysis of the Mx dye can be used as radiation dosimeters in two different dosimetry systems; liquid and gel dosimeters. This can be applied in a wide range of gamma radiation practical industrial applications in water treatment, food irradiation dosimeters, radiotherapy and fresh food irradiation and seed production. Originality/value Both of the prepared Mx dyes, either as solutions or gel samples, can be facilely prepared from commercially, cheap, safe, available chemicals and suitable for useful applied Mx solutions and gels radiation dosimeters.

scholarly journals Effect of Addition of Soybean Oil and Gamma-Ray Cross-linking on the Nanoporous HDPE Membrane

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Jong-Seok Park ◽  
Jong-Bae Choi ◽  
Hui-Jeong Gwon ◽  
Youn-Mook Lim ◽  
Myung Seob Khil ◽  
...  
Keyword(s):  
Tensile Strength ◽  
Soybean Oil ◽  
Gamma Rays ◽  
High Density Polyethylene ◽  
Dibutyl Phthalate ◽  
Gamma Ray ◽  
Absorbed Dose ◽  
Electrochemical Stability ◽  
Cross Linking ◽  
Wet Process

A nanoporous high-density polyethylene (HDPE) membrane was prepared by a wet process. Soybean oil and dibutyl phthalate (DBP) were premixed as codiluents, and gamma-rays were used for the cross-linking of HDPE. The pore volume of the nanoporous HDPE membranes with soybean oil was affected by the extracted amount of oil. The tensile strength of the membrane improved with an increasing absorbed dose up to 60 kGy, but decreased at 80 kGy due to severe degradation. The ionic conductivity of the nanoporous HDPE membrane did not really change with an increasing absorbed dose because the pores had already been formed before the gamma-ray radiation. Finally, the electrochemical stability of the HDPE membrane increased when the absorbed dose increased up to 60 kGy.

High-Purity Germanium Technology for Gamma-Ray and X-Ray Spectroscopy

1993 ◽  
Vol 302 ◽  
Author(s):  
L.S. Darken ◽  
C. E. Cox
Keyword(s):  
Cross Section ◽  
Gamma Rays ◽  
Ground State ◽  
High Purity ◽  
Gamma Ray ◽  
Capture Rate ◽  
X Rays ◽  
Hole Capture ◽  
High Purity Germanium ◽  
Energy Gamma

ABSTRACTHigh-purity germanium (HPGe) for gamma-ray spectroscopy is a mature technology that continues to evolve. Detector size is continually increasing, allowing efficient detection of higher energy gamma rays and improving the count rate and minimum detectable activity for lower energy gamma rays. For low-energy X rays, entrance window thicknesses have been reduced to where they are comparable to those in Si(Li) detectors. While some limits to HPGe technology are set by intrinsic properties, the frontiers have historically been determined by the level of control over extrinsic properties. The point defects responsible for hole trapping are considered in terms of the “standard level” model for hole capture. This model originates in the observation that the magnitude and temperature dependence of the cross section for hole capture at many acceptors in germanium is exactly that obtained if all incident s-wave holes were captured. That is, the capture rate is apparently limited by the arrival rate of holes that can make an angular-momentum-conserving transition to a s ground state. This model can also be generalized to other materials, where it may serve as an upper limit for direct capture into the ground state for either electrons or holes. The capture cross section for standard levels σS.L. is given bywhere g is the degeneracy of the ground state of the center after capture, divided by the degeneracy before capture. Mc is the number of equivalent extrema in the band structure for the carrier being captured, mo is the electronic mass, m* is the effective mass, and T is the temperature in degrees Kelvin.

Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays

2008 ◽  
Vol 600-603 ◽  
pp. 707-710
Author(s):  
Shigeomi Hishiki ◽  
Naoya Iwamoto ◽  
Takeshi Ohshima ◽  
Hisayoshi Itoh ◽  
Kazu Kojima ◽  
...  
Keyword(s):  
Gamma Rays ◽  
Radiation Resistance ◽  
Carbon Coating ◽  
Gamma Ray ◽  
Sample Surface ◽  
Fabrication Process ◽  
Channel Mobility ◽  
Carbon Coated ◽  
Gamma Ray Irradiation ◽  
Post Implantation

The effect of the fabrication process of n-channel 6H-SiC MOSFETs on their radiation resistance is investigated. MOSFETs that post implantation annealing for source and drain was carried out with carbon coating on the sample surface are compared to MOSFETs that post implantation annealing was carried out without carbon coating. The radiation resistance (gamma-rays) of the carbon-coated MOSFETs is higher than that of non-coated ones. The channel mobility for MOSFETs whose gate oxide was formed using pyrogenic or dry oxidation process dose not change by gamma-ray irradiation below 1x105 Gy. The value of channel mobility slightly increases with increasing dose above 1x105 Gy. No significant increase in irradiation induced interface traps is observed.

scholarly journals Nuclear Structure Investigations of some Medium-Weight Isotopes

2021 ◽  
Author(s):  
◽  
Gavin Wallace
Keyword(s):  
Nuclear Structure ◽  
Beta Decay ◽  
Cross Section ◽  
Gamma Rays ◽  
Half Life ◽  
Decay Scheme ◽  
Gamma Ray ◽  
Calculated Cross Section ◽  
Beta Spectrum ◽  
Gamma Ray Detectors

<p>This thesis describes the methods and results of investigations made to determine the decay schemes of three short-lived isotopes 112Ag, 114Ag and 116Ag. A total of 76 gamma-rays was observed with a Ge(Li) detector in the gamma-radiation which follows the Beta-decay of 112Ag to levels of 112Cd. gamma- gamma coincidence and angular correlation measurements were made with Ge(Li)-NaI(T1) and NaI(T1)-NaI(T1) systems. A decay scheme consistent with the present data is proposed. Cross sections for the reactions 112Cd(n,p)112Ag and 115In(n, alpha)112Ag were measured, and the half-life of the 112Ag decay was found to be 3.14 plus-minus 0.01 hr. The decay scheme of 114Ag was studied with Ge(Li) gamma-ray detectors and plastic Beta-ray detectors. 9 of the 11 gamma-rays observed in the decay were incorporated into 114Cd level structure previously determined by conversion electron measurements on the 113Cd(n,gamma)114Cd reaction. The endpoint energy of the Beta-decay was determined as 4.90 plus-minus 0.26 MeV; no branching was evident in the Beta-spectrum. A decay scheme is proposed for which the Beta-branching was deduced from the measured gamma-ray yield and a calculated cross section value for the 114Cd(n,p)114Ag reaction. The 114Ag half-life was determined as 4.52 plus-minus 0.03 sec; a search for a previously reported isomeric state of 114Ag was unsuccessful. Ge(Li) and NaI(T1) gamma-ray detectors were used to study the direct and coincidence spectra that result from the decay of 116Ag, the half-life of which was found to be 2.50 plus-minus 0.02 min. 53 gamma-rays were observed from this decay. The Beta-branching to the 17 excited states of 116Cd in the proposed decay scheme was derived from the measured gamma-ray yield and a calculated cross section value for the 116Cd(n,p)Ag reaction. Spin and parity assignments for ihe energy levels of 116Cd are made. An investigation of the applicability of two collective models to nuclear structure typical of the Cd nuclei studied demonstrated that one of the models was misleading when applied to vibrational nuclei. A potential function was developed in the other model to extend the investigation to include a study of the transition between extremes of collective motion. This was used to examine the correspondence between nuclear level schemes representative of rotational and vibrational excitations.</p>

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

2011 ◽  
Vol 679-680 ◽  
pp. 362-365 ◽  
Author(s):  
Takeshi Ohshima ◽  
Naoya Iwamoto ◽  
Shinobu Onoda ◽  
Takahiro Makino ◽  
Shinji Nozaki ◽  
...  
Keyword(s):  
Gamma Rays ◽  
Gamma Ray ◽  
Ion Beam ◽  
Gate Oxide ◽  
Peak Amplitude ◽  
Induced Current ◽  
Mos Capacitors ◽  
Oxygen Ion ◽  
Before And After ◽  
Gamma Ray Irradiation

Charge induced in 6H-SiC nMOS capacitors by 15 MeV oxygen ion microbeams was measured using Transient Ion Beam Induced Current (TIBIC) before and after gamma-ray irradiations. The peak amplitude of TIBIC signals decreases and the fall time increases with increasing number of incident ions. The decrease in the TIBIC peak eventually saturated. The TIBIC signal can be refreshed to its original shape by applying a positive bias of + 1V to gate oxide. Small decrease in both the peak amplitude of TIBIC signal and collected charge was observed due to gamma-ray irradiation.

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