Influence of the cap layer thickness on the optical properties of near surface GaInAs/GaAs quantum wells

1993 ◽  
Vol 21 (2-3) ◽  
pp. 198-200 ◽  
Author(s):  
J. Dreybrodt ◽  
F. Faller ◽  
A. Forchel ◽  
J.P. Reithmaier
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Near Surface ◽  
Cap Layer

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

2015 ◽  
Vol 117 (5) ◽  
pp. 055709 ◽  
Author(s):  
J. Yang ◽  
D. G. Zhao ◽  
D. S. Jiang ◽  
P. Chen ◽  
J. J. Zhu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Structural Characteristics ◽  
Indium Content ◽  
Cap Layer ◽  
High Indium Content

A new approach to the cap layer thinning of GaAs based heterostructures with near surface quantum wells

1997 ◽  
Vol 35 (1-4) ◽  
pp. 83-86
Author(s):  
T.B. Borzenko ◽  
Y.I. Koval ◽  
L.V. Kulik ◽  
A.V. Larionov
Keyword(s):  
Quantum Wells ◽  
Near Surface ◽  
New Approach ◽  
Cap Layer

Structural and optical properties of near-surface GaInNAs/GaAs quantum wells at emission wavelength of 1.3 μm

2003 ◽  
Vol 82 (15) ◽  
pp. 2428-2430 ◽  
Author(s):  
H. F. Liu ◽  
C. S. Peng ◽  
E.-M. Pavelescu ◽  
S. Karirinne ◽  
T. Jouhti ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Emission Wavelength ◽  
Structural And Optical Properties ◽  
Near Surface
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