Influence of the cap layer thickness on photoluminescence properties in strained InGaAs/GaAs single quantum wells

1994 ◽  
Vol 15 (10) ◽  
pp. 1643-1650 ◽  
Author(s):  
W. Z. Shen ◽  
W. G. Tang ◽  
S. C. Shen ◽  
S. M. Wang ◽  
T. Anderson
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Cap Layer

Strain recovery in partially relaxed In0.2Ga0.8As/GaAs single quantum wells with increasing GaAs cap layer thickness

1994 ◽  
Vol 9 (6) ◽  
pp. 1230-1233 ◽  
Author(s):  
S M Wang ◽  
T G Andersson ◽  
Z H Lai ◽  
J V Thordson
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Strain Recovery ◽  
Single Quantum ◽  
Cap Layer

Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells

1994 ◽  
Vol 65 (3) ◽  
pp. 336-337 ◽  
Author(s):  
S. M. Wang ◽  
J. V. Thordson ◽  
T. G. Andersson ◽  
S. Jiang ◽  
L. X. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Optical Quality ◽  
Single Quantum ◽  
Cap Layer

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

2015 ◽  
Vol 117 (5) ◽  
pp. 055709 ◽  
Author(s):  
J. Yang ◽  
D. G. Zhao ◽  
D. S. Jiang ◽  
P. Chen ◽  
J. J. Zhu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Structural Characteristics ◽  
Indium Content ◽  
Cap Layer ◽  
High Indium Content

Temperature‐dependent critical layer thickness for In0.36Ga0.64As/GaAs single quantum wells

1991 ◽  
Vol 58 (8) ◽  
pp. 854-855 ◽  
Author(s):  
M. J. Ekenstedt ◽  
S. M. Wang ◽  
T. G. Andersson
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Critical Layer ◽  
Single Quantum ◽  
Temperature Dependent ◽  
Critical Layer Thickness
Sign in / Sign up

Export Citation Format

Share Document