High-quality amorphous hydrogenated silicon carbide coatings by remote plasma chemical vapor deposition from a single-source precursor

1995 ◽  
Vol 53 (1-2) ◽  
pp. 477-482 ◽  
Author(s):  
A.M. Wróbel ◽  
S. Wickramanayaka ◽  
Y. Nakanishi ◽  
Y. Hatanaka
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Plasma Chemical ◽  
High Quality ◽  
Hydrogenated Silicon ◽  
Plasma Chemical Vapor Deposition ◽  
Amorphous Hydrogenated Silicon ◽  
Carbide Coatings ◽  
Single Source Precursor

APPLICATION OF PCVD PROCESS TO UNIFORM COATING OF TiO2 THIN FILMS ON POLYPROPYLENE BEADS

2010 ◽  
Vol 17 (03) ◽  
pp. 329-335 ◽  
Author(s):  
DONG-JOO KIM ◽  
HUNG CUONG PHAM ◽  
KYO-SEON KIM
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Rotation Speed ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Tio2 Thin Films ◽  
High Quality ◽  
Plasma Chemical Vapor Deposition ◽  
Uniform Coating ◽  
Plasma Reactions

The growth of the TiO 2 thin films coated on the polypropylene beads was analyzed experimentally in a rotating cylindrical plasma chemical vapor deposition (PCVD) reactor. The precursors for the thin films were generated by plasma reactions, and they deposited on the polypropylene beads to become the uniform thin films. The TiO 2 thin films grow more quickly on the polypropylene beads by increasing the mass flow rate of TTIP, or the rotation speed of the reactor. The smaller number of polypropylene beads in the reactor increases the growth rate of the thin films. The high-quality TiO 2 thin films can be coated on particles uniformly by using the rotating cylindrical PCVD process. The particles coated with high-quality TiO 2 thin films can be applied to the removal of air and water pollutants by a photodegradation reaction of TiO 2.

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