Influence of the electron cyclotron resonance microwave plasma on growth and properties of diamond-like carbon films deposited onto r.f. biased substrates

1993 ◽  
Vol 2 (2-4) ◽  
pp. 397-401 ◽  
Author(s):  
V. Dušek ◽  
M. Vaněček ◽  
P. Široký ◽  
V. Vorlíček
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Carbon Films ◽  
Electron Cyclotron ◽  
Diamond Like Carbon ◽  
Resonance Microwave

Formation of silicon carbide and amorphous carbon films by pulse biasing silicon to a high voltage in a methane electron cyclotron resonance microwave plasma

1998 ◽  
Vol 13 (7) ◽  
pp. 1765-1768 ◽  
Author(s):  
K. Volz ◽  
W. Ensinger ◽  
W. Reiber ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Carbon Films ◽  
Electron Cyclotron ◽  
Electrical Field ◽  
Transmission Microscopy ◽  
Amorphous Carbon Films ◽  
Microwave Excitation ◽  
Resonance Microwave

Silicon was pulse biased to −45 kV in a methane plasma generated by microwave excitation in the electron cyclotron resonance (ECR) mode. Hydrocarbon ions were accelerated in the electrical field and implanted into the silicon. Rutherford backscattering (RBS) measurements showed that it is possible to incorporate a concentration of up to 95 at.% C into the Si. Cross-section transmission microscopy (XTEM) showed that the resulting surface layer was amorphous. Annealing at 1250 °C resulted in the formation of 10 to 60 nm thick, crystalline SiC layers.

Electron-Cyclotron-Resonance Microwave Plasma Oxidation of Er1Ba2Cu3OySuperconductive Ceramics

1988 ◽  
Vol 27 (Part 2, No. 3) ◽  
pp. L411-L413 ◽  
Author(s):  
Shoichiro Minomo ◽  
Michio Taniguchi ◽  
Yuji Ishida ◽  
Masato Sugiyo ◽  
Tetsuro Takahashi ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Electron Cyclotron ◽  
Plasma Oxidation ◽  
Resonance Microwave
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