Influence of high oxygen partial pressure annealing on the positive temperature coefficient of Mn-doped Ba0·8Sr0·2TiO3

1993 ◽  
Vol 11 (5) ◽  
pp. 395-400 ◽  
Author(s):  
B. Huybrechts ◽  
K. Ishizaki ◽  
M. Takata
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Temperature Coefficient ◽  
Positive Temperature Coefficient ◽  
High Oxygen ◽  
Positive Temperature ◽  
High Oxygen Partial Pressure ◽  
Mn Doped

Influence of High Oxygen Partial Pressure on the Positive Temperature Coefficient Resistivity of BaTiO3

1991 ◽  
Vol 251 ◽  
Author(s):  
Ben Huybrechts ◽  
K. Ishizaki ◽  
M. Takata
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Grain Boundaries ◽  
Temperature Coefficient ◽  
Arrhenius Plot ◽  
Positive Temperature Coefficient ◽  
High Oxygen ◽  
Positive Temperature ◽  
High Oxygen Partial Pressure ◽  
Partial Pressures

ABSTRACTThe influence of high oxygen partial pressures on the PTC behavior of non acceptor doped BaTiO3 is studied by using oxygen-hot-isostatic-press (O2-HIP). Annealing in high oxygen partial pressures increased the maximum resistivity with a factor 3, also the minimum resistivity and the gradient in the Arrhenius plot, i.e. resistivity versus the reciprocal of the temperature, increased. The results are analyzed using the well accepted Heywang model. The changes after O2-HIPping can be explained with an increase in acceptor density at the grain boundaries.

Accumulation of bialaphos intermediates under high oxygen partial pressure and their conversion to bialaphos

1991 ◽  
Vol 71 (6) ◽  
pp. 433-435 ◽  
Author(s):  
Hidehi Takebe ◽  
Osamu Hiruta ◽  
Mihoko Matsunaga ◽  
Atsuyuki Satoh ◽  
Hideo Tanaka
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
High Oxygen ◽  
High Oxygen Partial Pressure

Microstructures in (Y0.95Ca0.05)Ba2Cu4O8 prepared by low and high oxygen partial pressure techniques

1990 ◽  
Vol 169 (3-4) ◽  
pp. 289-293 ◽  
Author(s):  
Koji Yamaguchi ◽  
Takayuki Miyatake ◽  
Takahiro Wada ◽  
Nobuo Suzuki ◽  
Tsutomu Takata ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
High Oxygen ◽  
High Oxygen Partial Pressure

AgO Doped YBa2Cu4O8 Superconductor Under High Oxygen Partial Pressure

1991 ◽  
Vol 251 ◽  
Author(s):  
Yuichi Sawai ◽  
K. Ishizaki ◽  
M. Takata ◽  
A. Kuzjukevics
Keyword(s):  
Critical Temperature ◽  
Critical Current Density ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Critical Current ◽  
Current Density ◽  
High Oxygen ◽  
Silver Doping ◽  
High Oxygen Partial Pressure ◽  
Pressing Method

ABSTRACTGeneraly silver doping into YBa2Cu3O7 superconductor improves the critical temperature and critical current density. In this work the silver peroxide was doped into YBa2Cu4O8 superconductor and sintered by the Oxygen Hot Isostatically Pressing method. The critical temperature of the 124 phase increased by silver peroxide doping.

Structure and photoresponse characteristics of ZnO thin films grown at high oxygen partial pressure

2007 ◽  
Vol 308 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Yanfei Gu ◽  
Xiaomin Li ◽  
Junliang Zhao ◽  
Weidong Yu ◽  
Xiangdong Gao
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
High Oxygen ◽  
Zno Thin Films ◽  
High Oxygen Partial Pressure
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