Film thickness change due to grain boundary migration in stressed thin films at elevated temperatures

1996 ◽  
Vol 35 (2) ◽  
pp. 233-238
Author(s):  
T.M. Lillo ◽  
M.R. Plichta ◽  
S.A. Hackney
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Film Thickness ◽  
Elevated Temperatures ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Thickness Change

Anisotropy of Grain Boundary Migration Observed in Situ by Synchrotron Radiation

2004 ◽  
Vol 467-470 ◽  
pp. 911-916 ◽  
Author(s):  
Václav Paidar ◽  
Pavel Lejček ◽  
M. Polcarová ◽  
J. Brádler ◽  
Alain Jacques
Keyword(s):  
Synchrotron Radiation ◽  
Grain Boundary ◽  
Moving Boundary ◽  
Elevated Temperatures ◽  
Rotation Axis ◽  
Boundary Migration ◽  
Crystal Defects ◽  
Grain Boundary Migration ◽  
Grain Boundary Motion

Grain boundary motion was studied in situ at elevated temperatures by x-ray topography using synchrotron radiation. In addition to the position of grain boundary, other crystal defects that may interact with the moving boundary were observed simultaneously. Two types of bicrystals with the [001] rotation axis were selected for the experiments, the first one with a high coincidence S5 misorientation of about 37° and the other one with no coincidence of two crystals for the misorientation of 45°. The geometrical differences between chosen bicrystals are examined and attention is also paid to faceting – local orientations of the boundary plane.

scholarly journals GRAIN BOUNDARY MIGRATION IN THIN FILMS USING MONTE CARLO METHOD

Anales AFA ◽  
2020 ◽  
Vol 31 (1) ◽  
pp. 7-12
Author(s):  
C. L. Di Prinzio ◽  
P. I. Achával ◽  
D. Stoler ◽  
G. Aguirre Varela
Keyword(s):  
Thin Films ◽  
Monte Carlo ◽  
Free Surface ◽  
Monte Carlo Method ◽  
Grain Boundary ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Thin Sample ◽  
The Monte Carlo Method ◽  
Theoretical Results

This paper presents the evolution of a flat grain boundary in a thin sample, using a numerical algorithm based on the Monte Carlo method. The grain boundary is driven by an external force and the effect of the free surface is studied.The grain boundary migration on the free surface is spasmodic, which means that it has alternating periods of movement and stagnation. Stagnation periods are inversely proportional to the thickness of the sample. The results obtained computationally fitted acceptable with the theoretical results obtained by different authors.

In Situ Observations and Measurements of Mechanically Induced Grain Boundary Migration in a Scanning Electron Microscope

2012 ◽  
Vol 715-716 ◽  
pp. 819-824 ◽  
Author(s):  
Tatiana Gorkaya ◽  
Thomas Burlet ◽  
Dmitri A. Molodov ◽  
Günter Gottstein
Keyword(s):  
Shear Stress ◽  
Grain Boundary ◽  
Elevated Temperatures ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Orientation Contrast ◽  
In Situ Observations ◽  
Set Up ◽  
Scanning Electron

A novel set-up developed to continuously observe and measure stress driven grain boundary migration is presented. A commercially available tensile/compression SEM unit was utilized for in-situ observations of mechanically loaded samples at elevated temperatures up to 850°C by recording orientation contrast images of bicrystal surfaces. Two sample holders for application of a shear stress to the boundary in bicrystals of different geometry were designed and fabricated. The results of first measurements are presented.

Study of the effect of grain boundary migration on hillock formation in Al thin films

2001 ◽  
Vol 90 (2) ◽  
pp. 781-788 ◽  
Author(s):  
Deok-kee Kim ◽  
William D. Nix ◽  
Richard P. Vinci ◽  
Michael D. Deal ◽  
James D. Plummer
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Hillock Formation

Agglomeration of Cobalt Silicide Films

1990 ◽  
Vol 202 ◽  
Author(s):  
Z. G. Xiao ◽  
G. A. Rozgonyi ◽  
C. A. Canovai ◽  
C. M. Osburn
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Grain Size ◽  
Grain Boundary ◽  
Film Thickness ◽  
Film Formation ◽  
Boundary Migration ◽  
Boundary Energy ◽  
Si Substrates ◽  
Probe Measurements

ABSTRACTThe agglomeration of Co silicide films formed on Si substrates processed with different Co film thickness was investigated by TEM, XRD, and four-point-probe measurements. It was found that thermal grooving always accompanies the film formation, while islanding can occur during high temperature thermal stability testing, or during formation of very thin films at moderate temperatures. In addition to whole film agglomeration, partial agglomeration on the top of the film has been observed, which is prominent and important for thin films. A theoretical model of agglomeration for silicide films is presented, which shows that when the ratio of grain size to film thickness is smaller than a critical value, the film will not lose its continuity. Also, grain boundary migration was found to have a suppressing effect on thermal grooving. Both a small grain size and a low grain boundary energy are shown to be favorable for improving the thermal stability.

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