CW LASER ANNEALING OF ION-IMPLANTED POLYCRYSTALLINE SILICON FILMS

Laser and Electron Beam Processing of Materials ◽

10.1016/b978-0-12-746850-1.50045-1 ◽

1980 ◽

pp. 291-296 ◽

Author(s):

Gregory L. Olson ◽

LaVerne D. Hess ◽

Giora Yaron ◽

Joseph Peng

Keyword(s):

Polycrystalline Silicon ◽

Laser Annealing ◽

Silicon Films ◽

Cw Laser ◽

Polycrystalline Silicon Films ◽

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Pulsed‐laser annealing of ion‐implanted polycrystalline silicon films

Applied Physics Letters ◽

10.1063/1.90678 ◽

1979 ◽

Vol 34 (11) ◽

pp. 737-739 ◽

Author(s):

C. P. Wu ◽

C. W. Magee

Keyword(s):

Polycrystalline Silicon ◽

Laser Annealing ◽

Pulsed Laser ◽

Silicon Films ◽

Pulsed Laser Annealing ◽

Polycrystalline Silicon Films ◽

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Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealing

Applied Physics Letters ◽

10.1063/1.113212 ◽

1995 ◽

Vol 66 (11) ◽

pp. 1394-1396 ◽

Author(s):

R. Carluccio ◽

J. Stoemenos ◽

G. Fortunato ◽

D. B. Meakin ◽

M. Bianconi

Keyword(s):

Polycrystalline Silicon ◽

Laser Annealing ◽

Silicon Films ◽

Polycrystalline Silicon Films

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The effect of thermal annealing on the grain size and electrical characteristics of arsenic ion‐implanted and laser‐irradiated polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.329542 ◽

1981 ◽

Vol 52 (9) ◽

pp. 5566-5574 ◽

Author(s):

Kenji Shibata ◽

Shinji Onga

Keyword(s):

Thermal Annealing ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Electrical Characteristics ◽

Polycrystalline Silicon Films ◽

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New Method to Obtain (001) Surface-Oriented Polycrystalline Silicon Films by Intensity-Modulated Excimer Laser Annealing: Molecular Dynamics Study

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.03b006 ◽

2009 ◽

Vol 48 (3) ◽

pp. 03B006 ◽

Author(s):

Norie Matsubara ◽

Tomohiko Ogata ◽

Takanori Mitani ◽

Shinji Munetoh ◽

Teruaki Motooka

Keyword(s):

Molecular Dynamics ◽

Excimer Laser ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Silicon Films ◽

Excimer Laser Annealing ◽

Intensity Modulated ◽

Oriented Polycrystalline ◽

Polycrystalline Silicon Films

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Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

Journal of Materials Science Materials in Electronics ◽

10.1007/bf00180785 ◽

1996 ◽

Vol 7 (6) ◽

Author(s):

Myeon-Koo Kang ◽

Takayuki Matsui ◽

Hiroshi Kuwano

Keyword(s):

Electrical Properties ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Polycrystalline Silicon Films ◽

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Electrical properties and grain size of phosphorus in situ doped and cw laser annealed polycrystalline silicon films

Vacuum ◽

10.1016/0042-207x(85)90251-9 ◽

1985 ◽

Vol 35 (8) ◽

pp. 341

Keyword(s):

Electrical Properties ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Cw Laser ◽

Polycrystalline Silicon Films

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Electrical measurements on ion-implanted LPCVD polycrystalline silicon films

Solid-State Electronics ◽

10.1016/0038-1101(83)90021-7 ◽

1983 ◽

Vol 26 (7) ◽

pp. 657-665 ◽

Author(s):

Ruey-Shing Huang ◽

Chin-Hsiung Cheng ◽

J.C. Liu ◽

M.K. Lee ◽

C.T. Chen

Keyword(s):

Polycrystalline Silicon ◽

Silicon Films ◽

Electrical Measurements ◽

Polycrystalline Silicon Films ◽

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Effect of Hydrogen on Secondary Grain Growth of Polycrystalline Silicon Films by Excimer Laser Annealing in Low-Temperature Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.6908 ◽

2006 ◽

Vol 45 (9A) ◽

pp. 6908-6910 ◽

Author(s):

Akira Heya ◽

Naoto Matsuo ◽

Hideki Matsumura ◽

Naoya Kawamoto

Keyword(s):

Low Temperature ◽

Grain Growth ◽

Excimer Laser ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Silicon Films ◽

Excimer Laser Annealing ◽

Polycrystalline Silicon Films ◽

Low Temperature Process

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Thin film transistors and photo diodes fabricated on double-layered polycrystalline silicon films formed by green laser annealing

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944837 ◽

2011 ◽

Author(s):

Koji Yamasaki ◽

Emi Machida ◽

Masahiro Horita ◽

Yasuaki Ishikawa ◽

Yukiharu Uraoka

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Green Laser ◽

Silicon Films ◽

Polycrystalline Silicon Films

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Electrical properties and grain size of phosphorusinsitudoped and cw laser annealed polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.331341 ◽

1982 ◽

Vol 53 (7) ◽

pp. 5086-5092 ◽

Author(s):

T. Ternisien d’Ouville ◽

D. P. Vu ◽

A. Perio ◽

A. Baudrant

Keyword(s):

Electrical Properties ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Cw Laser ◽

Polycrystalline Silicon Films

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