Strain-compensations for interfacial strain and average strain in InGaAs/InAlP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328295 ◽

2002 ◽

Author(s):

S. Sugou ◽

K. Naniwae ◽

T. Anan ◽

K. Nishi

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Average Strain ◽

Quantum Well Structures ◽

Gas Source ◽

Interfacial Strain

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Strain-compensations for interfacial strain and average strain in InGaAs/InAIP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50016-x ◽

1994 ◽

pp. 69-73

Author(s):

K. Naniwae ◽

S. Sugou ◽

T. Anan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Average Strain ◽

Quantum Well Structures ◽

Gas Source ◽

Interfacial Strain

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Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l79 ◽

1994 ◽

Vol 33 (Part 2, No. 1B) ◽

pp. L79-L82 ◽

Cited By ~ 13

Author(s):

Yuichi Kawamura ◽

Hideki Kobayashi ◽

Hidetoshi Iwamura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Type I ◽

Type Ii ◽

Quantum Well Structures ◽

Gas Source

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Growth of Ga1−xInxAs/GaAs1−yPy multiple quantum well structures by gas source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586097 ◽

1992 ◽

Vol 10 (2) ◽

pp. 949 ◽

Cited By ~ 6

Author(s):

J. E. Cunningham

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Gas Source

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Gas‐source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures

Applied Physics Letters ◽

10.1063/1.104733 ◽

1991 ◽

Vol 58 (25) ◽

pp. 2954-2956 ◽

Cited By ~ 24

Author(s):

H. Q. Hou ◽

C. W. Tu ◽

S. N. G. Chu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Molecular Beam Epitaxy Growth ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Gas Source ◽

Highly Strained

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Effect of Strain Compensation on Crystalline Quality for InGaAs/InAlP Strained Multiple Quantum Well Structures on InP Grown by Gas-Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l156 ◽

1994 ◽

Vol 33 (Part 2, No. 2A) ◽

pp. L156-L158 ◽

Cited By ~ 5

Author(s):

Kouichi Naniwae ◽

Shigeo Sugou ◽

Takayoshi Anan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Crystalline Quality ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Gas Source ◽

Strain Compensation

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Growth of pseudomorphic InxGa1-xAs⧸GaPyAs1-y multiple quantum well structures on GaAs by gas source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90601-r ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 184-188 ◽

Cited By ~ 9

Author(s):

J.E. Cunningham ◽

K.W. Goossen ◽

W. Jan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Gas Source

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Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00317-6 ◽

1999 ◽

Vol 206 (1-2) ◽

pp. 15-22 ◽

Cited By ~ 2

Author(s):

Jin-Shung Liu ◽

Jyh-Shyang Wang ◽

K.Y Hsieh ◽

Hao-Hsiung Lin

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Structural And Optical Properties ◽

Quantum Well Structures ◽

Gas Source

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InGaAsP/InAlAs type I/type II multiple quantum well structures grown by gas source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80279-l ◽

1995 ◽

Vol 150 ◽

pp. 597-601 ◽

Cited By ~ 6

Author(s):

Yuichi Kawamura ◽

Hidetoshi Iwamura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Type I ◽

Type Ii ◽

Quantum Well Structures ◽

Gas Source

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Raman scattering from GaAs/AlGaAs multiple quantum well structures grown by two-step molecular beam epitaxy

Current Applied Physics ◽

10.1016/j.cap.2016.12.023 ◽

2017 ◽

Vol 17 (3) ◽

pp. 398-402 ◽

Cited By ~ 5

Author(s):

Taegeon Lee ◽

Heesuk Rho ◽

Jin Dong Song ◽

Won Jun Choi

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Raman Scattering ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures

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Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

Applied Physics Letters ◽

10.1063/1.3373834 ◽

2010 ◽

Vol 96 (14) ◽

pp. 141112 ◽

Cited By ~ 45

Author(s):

V. N. Jmerik ◽

A. M. Mizerov ◽

A. A. Sitnikova ◽

P. S. Kop’ev ◽

S. V. Ivanov ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Low Threshold

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