Laser deposition of YBa2Cu3O7 films on MgO(100) at 100 mm target–substrate distance and oxygen pressures below 0.1 mbar

1996 ◽  
pp. 708-712
Author(s):  
F. Goerke ◽  
A. Thorns ◽  
U. Merkt
Keyword(s):  
Laser Deposition ◽  
Substrate Distance

Morphology Control of Pulsed-Laser Deposited Ag Quantum Dots

2002 ◽  
Vol 749 ◽  
Author(s):  
Kinuyo Machi ◽  
Sanshiro Nagare ◽  
Kenji Hamada ◽  
Mamoru Senna
Keyword(s):  
Pulse Width ◽  
Deposition Time ◽  
Pulsed Laser ◽  
Pulse Frequency ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Substrate Distance ◽  
Self Organized ◽  
Size And Morphology ◽  
Ar Gas

ABSTRACTSelf-organized Ag nanodots were deposited on Si(100) by a pulsed laser deposition method. A compact apparatus was specially developed for this purpose with Nd:YAG-laser. Factors dominating size and morphology of the nanodots were examined by systematically varying species and pressure of the gas in the deposition chamber, deposition time, and the target –substrate distance (TSD). Pulse frequency (10Hz), pulse width (8ns) and laser wavelength (266nm) were kept constant. The dot size increased with pressure in the range between 0.005Pa to 1Pa, in Ar gas. At pressures as high as 100Pa, dot size decreased again with slightly different morphology. Increasing deposition time from 3, 5, to 10min brought about an increase in the average dot size from 5±2.1nm, 9±2.4nm, 10±3.0nm, respectively, under the constant Ar pressure, 100Pa. It is particularly to be noted that decreasing TSD from 100mm to 50mm brought about an increase in the dot size from 5±2.1nm to 9±3.3nm at Ar pressure, 100Pa, and deposition time, 3min. We discuss factors making self-organized Ag nanodots, and proposed key values to evaluate homogenize of dots assembly.

Effect of target–substrate distance on the quality of AlN films grown on Si(110) substrates by pulsed laser deposition

2015 ◽  
Vol 160 ◽  
pp. 20-23 ◽  
Author(s):  
Weijia Yang ◽  
Wenliang Wang ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
Ying Liu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Substrate Distance

Correlation between target–substrate distance and oxygen pressure in pulsed laser deposition of complex oxide thin films

2005 ◽  
Vol 81 (7) ◽  
pp. 1503-1507 ◽  
Author(s):  
R. Castro-Rodríguez ◽  
D. Reyes Coronado ◽  
A. Iribarren ◽  
B.E. Watts ◽  
F. Leccabue ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Complex Oxide ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Substrate Distance

Pulsed laser deposition of a-CNx:H films: the role of target-to-substrate distance and laser fluence

2000 ◽  
Vol 154-155 ◽  
pp. 454-457 ◽  
Author(s):  
P González ◽  
R Soto ◽  
B León ◽  
M Pérez-Amor ◽  
T Szörényi
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Substrate Distance

EFFECTS OF TECHNICAL PARAMETERS ON THE PULSED LASER DEPOSITED FERROELECTRIC FILMS

2006 ◽  
Vol 13 (05) ◽  
pp. 687-695
Author(s):  
YAFAN ZHAO ◽  
CHUANZHONG CHEN ◽  
MINGDA SONG ◽  
JIE MA ◽  
DIANGANG WANG
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ferroelectric Films ◽  
Technical Parameters ◽  
Substrate Distance ◽  
Novel Technique ◽  
Target Composition ◽  
Post Annealing

Pulsed laser deposition (PLD), which is a novel technique in producing thin films in the recent years, shows unique advantages for the deposition of ferroelectric films. Effects of technical parameters on the pulsed laser deposited ferroelectric films, including substrate temperature, oxygen pressure, post-annealing, buffer layer, target composition, energy density, wavelength, target-to-substrate distance, and laser pulse rate, are systematically reviewed in order to optimize these parameters. Processing-microstructure-property relationships of ferroelectric films by PLD are discussed. The application prospect is pointed as well.

Researching Influence of IBAD PLD Parameters on Properties of Nanocrystalline ZnO Thin Films

2013 ◽  
Vol 481 ◽  
pp. 55-59 ◽  
Author(s):  
Oleg Alexeevich Ageev ◽  
Dmitriy Anatolievich Golosov ◽  
Evgeny Genadievich Zamburg ◽  
Alexandr Michailovich Alexeev ◽  
Zakhar Evgenievich Vakulov ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Laser Pulses ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Nanocrystalline Films ◽  
Electrical Parameters ◽  
Technological Parameters ◽  
Substrate Distance

Nanocrystalline ZnO thin films were manufactured by Ion Beam Assisted Pulsed Laser Deposition (IBAD PLD). The influence of technological parameters and parameters of ion assisted deposition on structural, morphological and electrical parameters of ZnO thin films were researched in the experiments. As a result it was determined that changes in the basic technological parameters of IBAD PLD (target-substrate distance, substrate temperature, energy density of the laser pulses, annealing temperature, Ar flow) are able to change properties of the thin films significant, including surface roughness in the range from 0.75±0.20 nm to 7.8±2.2 nm, resistivity in the range from 10-3 Ohm cm to 104 Ohm cm. The possibility of controlling the morphological and physical properties of ZnO nanocrystalline films obtained in the experiments has been shown.

scholarly journals Получение тонких пленок теллурида висмута на полиимидных подложках методом импульсного лазерного осаждения

2020 ◽  
Vol 54 (3) ◽  
pp. 305
Author(s):  
А.Е. Шупенев ◽  
И.С. Коршунов ◽  
А.Г. Григорьянц
Keyword(s):  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Growth Temperature ◽  
Electrical Power ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Substrate Distance ◽  
Polyimide Substrate ◽  
High Seebeck Coefficient

Abstract The peculiarities of obtaining p -Bi_0.5Sb_1.5Te_3 and n -Bi_2Te_2.7Se_0.3 thin thermoelectric films with a thickness of about 300 nm grown on a polyimide substrate by the pulsed-laser-deposition method are reported. The influence of the growth temperature, pressure and target-to-substrate distance on the film’s thermoelectric properties is investigated. Thermoelectric p - and n -type films exhibit a high Seebeck coefficient of 220 and –200 μV/K and low electrical power factors of 9.7 and 5.0 μW/(cm K^2) respectively due to the relatively high electrical resistances of the films.

Sign in / Sign up

Export Citation Format

Share Document