Sensory analysis of hepatitis B virus DNA for medicinal clinical diagnostics based on molybdenum doped ZnO nanowires field effect transistor biosensor; a comparative study to PCR test results

2022 ◽  
pp. 339442
Author(s):  
Mohsen Shariati ◽  
Mahdi Sadeghi ◽  
S.H. Reza Shojaei
Keyword(s):  
Hepatitis B Virus ◽  
Hepatitis B ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Clinical Diagnostics ◽  
Test Results ◽  
B Virus ◽  
Effect Transistor ◽  
Doped Zno ◽  
Pcr Test

Real-time sensing of hepatitis B virus X gene using an ultrasensitive nanowire field effect transistor

2014 ◽  
Vol 34 (3) ◽  
pp. 273-277 ◽  
Author(s):  
Chia-Yu Wu ◽  
Han-Yi Cheng ◽  
Keng-Liang Ou ◽  
Chi-Chang Wu
Keyword(s):  
Hepatitis B Virus ◽  
Hepatitis B ◽  
Real Time ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Label Free ◽  
Gene Detection ◽  
Highly Sensitive ◽  
B Virus ◽  
Effect Transistor

Abstract Devices based on semiconducting nanowires (NWs) are functioning as highly sensitive and selective sensors for the label-free detection of biological and chemical species. This paper demonstrates a novel back-gated silicon NW field effect transistor (NWFET) for gene detection. The fabricated NWFET was employed as the biomolecule sensor for the early, real-time, and label-free screening of hepatitis B virus (HBV) X gene. The DNA fragment in HBV demonstrates the linearity from 10 fM to 1 pM, of which the detection limit is estimated to be about 3.2 fM. The obtained results also show that the NW-based sensor can distinguish the difference between the complementary and 1-base mismatch DNA. The back-gated NW FET exhibits a label-free, highly sensitive, and selective biosensor for gene detection, which also provides a possibility of multiple chemical and biological species detection with sensor array in an integrated chip.

scholarly journals Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts

APL Materials ◽  
2017 ◽  
Vol 5 (8) ◽  
pp. 086111 ◽  
Author(s):  
Zheng Zhang ◽  
Junli Du ◽  
Bing Li ◽  
Shuhao Zhang ◽  
Mengyu Hong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Doped Zno

scholarly journals ZnO Nanowire Field Effect Transistor for Biosensing: A Review

2019 ◽  
Vol 60 ◽  
pp. 94-112 ◽  
Author(s):  
Nonofo M.J. Ditshego
Keyword(s):  
Mass Production ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Specific Binding ◽  
Zno Nanowire ◽  
Long Time ◽  
Effect Transistor ◽  
Doped Zno ◽  
P Type ◽  
Intense Research

The last 19 years have seen intense research made on zinc oxide (ZnO) material mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. The review focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalisation achieved by attaching a variety of compounds on the designated sensing area. Reference electrodes and buffers are used as controllers. Top-down fabrication processes are preferred over bottom-up because they pave way for mass production. Different growth techniques are reviewed and discussed. Strengths and weaknesses of the FET and sensor are also reviewed.

Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique

2010 ◽  
Vol 208 (1) ◽  
pp. 206-209 ◽  
Author(s):  
Yan Wu ◽  
Emad Girgis ◽  
Valter Ström ◽  
Wolfgang Voit ◽  
Lyubov Belova ◽  
...  
Keyword(s):  
Thin Film ◽  
Ultraviolet Light ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Zno Thin Film ◽  
Effect Transistor ◽  
Doped Zno
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