Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts

The last 19 years have seen intense research made on zinc oxide (ZnO) material mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. The review focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalisation achieved by attaching a variety of compounds on the designated sensing area. Reference electrodes and buffers are used as controllers. Top-down fabrication processes are preferred over bottom-up because they pave way for mass production. Different growth techniques are reviewed and discussed. Strengths and weaknesses of the FET and sensor are also reviewed.

Download Full-text

Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique

physica status solidi (a) ◽

10.1002/pssa.201026264 ◽

2010 ◽

Vol 208 (1) ◽

pp. 206-209 ◽

Cited By ~ 42

Author(s):

Yan Wu ◽

Emad Girgis ◽

Valter Ström ◽

Wolfgang Voit ◽

Lyubov Belova ◽

...

Keyword(s):

Thin Film ◽

Ultraviolet Light ◽

Field Effect ◽

Field Effect Transistor ◽

Zno Thin Film ◽

Effect Transistor ◽

Doped Zno

Download Full-text

pH Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Al-Doped ZnO Nanostructures Hydrothermally Synthesized at Low Temperatures

IEEE Electron Device Letters ◽

10.1109/led.2011.2164230 ◽

2011 ◽

Vol 32 (11) ◽

pp. 1603-1605 ◽

Cited By ~ 29

Author(s):

Po-Yu Yang ◽

Jyh-Liang Wang ◽

Po-Chun Chiu ◽

Jung-Chuan Chou ◽

Cheng-Wei Chen ◽

...

Keyword(s):

Low Temperatures ◽

Field Effect ◽

Field Effect Transistor ◽

Zno Nanostructures ◽

Ph Sensing ◽

Effect Transistor ◽

Doped Zno ◽

Sensing Characteristics

Download Full-text

pH-Sensing Characteristics of Hydrothermal Al-Doped ZnO Nanostructures

Journal of Nanomaterials ◽

10.1155/2013/152079 ◽

2013 ◽

Vol 2013 ◽

pp. 1-7 ◽

Cited By ~ 15

Author(s):

Jyh-Liang Wang ◽

Po-Yu Yang ◽

Tsang-Yen Hsieh ◽

Chuan-Chou Hwang ◽

Miin-Horng Juang

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Ph Sensing ◽

Sensing Properties ◽

Electrochemical Application ◽

Growth Method ◽

Effect Transistor ◽

Doped Zno ◽

Sensing Characteristics

Highly sensitive and stable pH-sensing properties of an extended-gate field-effect transistor (EGFET) based on the aluminum-doped ZnO (AZO) nanostructures have been demonstrated. The AZO nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C. The AZO sensing nanostructures were connected with the metal-oxide-semiconductor field-effect transistor (MOSFET). Afterwards, the current-voltage (I-V) characteristics and the sensing properties of the pH-EGFET sensors were obtained in different buffer solutions, respectively. As a result, the pH-sensing characteristics of AZO nanostructured pH-EGFET sensors with Al dosage of 3 at.% can exhibit the higher sensitivity of 57.95 mV/pH, the larger linearity of 0.9998, the smaller deviation of 0.023 in linearity, the lower drift rate of 1.27 mV/hour, and the lower threshold voltage of 1.32 V with a wider sensing range (pH 1 ~ pH 13). Hence, the outstanding stability and durability of AZO nanostructured ionic EGFET sensors are attractive for the electrochemical application of flexible and disposable biosensor.

Download Full-text