Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

2004 ◽  
Vol 228 (1-4) ◽  
pp. 128-134 ◽  
Author(s):  
Hong-Ying Chen ◽  
Sheng Han ◽  
Chih-Hsuan Cheng ◽  
Han C. Shih
Keyword(s):  
Aluminum Nitride ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Argon Ion ◽  
Sputtering System

Aluminum nitride films synthesized by dual ion beam sputtering

2004 ◽  
Vol 19 (12) ◽  
pp. 3521-3525 ◽  
Author(s):  
Sheng Han ◽  
Hong-Ying Chen ◽  
Chih-Hsuan Cheng ◽  
Jian-Hong Lin ◽  
Han C. Shih
Keyword(s):  
Crystal Structure ◽  
Aluminum Nitride ◽  
Ion Beam ◽  
Diffraction Field ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Beam Voltage ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Aluminum nitride films were deposited by varying the voltages of argon ion beams from 400 to 1200 V in dual ion beam sputtering. The crystal structure, microstructure, and elemental distributions of the aluminum nitride films were analyzed by x-ray diffraction, field emission scanning electron microscopy, and secondary ion mass spectroscopy, respectively. The aluminum nitride films exhibited the 〈002〉 preferred orientation at an optimal ion beam voltage of 800 V. The orientation changed to a mixture of {100} and {002} planes above 800 V, accounting for radiation damage. The thickness of the film increases with increasing ion beam voltage, reaching a steady state value of 210 nm at an ion beam voltage of 1200 V. Under optimal condition (800 V), the c-axis orientation of the aluminum nitride 〈002〉 film was obtained with a dense and high-quality crystal structure.

Deposition Characteristics of AlN Thin Film Prepared by the Dual Ion Beam Sputtering System

2006 ◽  
Vol 36 (1) ◽  
pp. 81-87 ◽  
Author(s):  
T. L. Hu ◽  
S. W. Mao ◽  
C. P. Chao ◽  
M. F. Wu ◽  
H. L. Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Sputtering System

Dual Ion Beam Sputtering for Chromium Nitride as an Alternative to Electroplated Hexavalent Chromium

2005 ◽  
Vol 486-487 ◽  
pp. 301-304
Author(s):  
Kyoung Chul Shin ◽  
Jong Min Lim ◽  
Chong Mu Lee
Keyword(s):  
Corrosion Resistance ◽  
Deposition Rate ◽  
Ion Beam ◽  
Rf Power ◽  
Ion Beam Sputtering ◽  
Chromium Plating ◽  
Beam Sputtering ◽  
Nitrogen Ion ◽  
Dual Ion Beam Sputtering ◽  
Argon Ion

The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and even carcinogenic. Therefore, it is indispensable to develop an alternative deposition technique. To explore the feasibility of sputtering as an alternative technique for chromium plating, we investigated the dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrNx deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-powers. The deposition rate of CrNx depends more strongly upon the rf-power for argon ion beam than that of the nitrogen ion beam. The hardness of the CrNx film can be maximized by optimizing the rf-power, so that the volume percent of the Cr2N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrNx film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium.

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