Growth behavior of high k LaAlO 3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

2005 ◽  
Vol 250 (1-4) ◽  
pp. 14-20 ◽  
Author(s):  
Qi-Yue Shao ◽  
Ai-Dong Li ◽  
Jin-Bo Cheng ◽  
Hui-Qin Ling ◽  
Di Wu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Growth Behavior ◽  
High K ◽  
Metalorganic Chemical

Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon

2003 ◽  
Vol 83 (1) ◽  
pp. 129-131 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Vito Raineri ◽  
Corrado Bongiorno ◽  
Roberta Toro ◽  
Graziella Malandrino ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Dielectric Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High K ◽  
Metalorganic Chemical
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