Alkali metal doping and energy level shift in organic semiconductors

2006 ◽  
Vol 252 (11) ◽  
pp. 3943-3947 ◽  
Author(s):  
Huanjun Ding ◽  
Yongli Gao
Keyword(s):  
Energy Level ◽  
Alkali Metal ◽  
Organic Semiconductors ◽  
Level Shift ◽  
Metal Doping ◽  
Energy Level Shift

REVERSAL OF DOPING INDUCED ENERGY LEVEL SHIFT IN ORGANIC SEMICONDUCTORS

2007 ◽  
Vol 06 (02) ◽  
pp. 125-129 ◽  
Author(s):  
HUANJUN DING ◽  
YONGLI GAO
Keyword(s):  
Electronic Structure ◽  
Energy Level ◽  
Organic Semiconductors ◽  
Energy Levels ◽  
Photoemission Spectroscopy ◽  
Level Shift ◽  
Highest Occupied Molecular Orbital ◽  
Energy Level Shift ◽  
Fine Tune ◽  
Gap State

We have investigated the electronic structure of the interface formed by depositing Au on Cs -doped and Na -doped tris(8-hydroxyquinoline) aluminum (Alq) film using ultraviolet and X-ray photoemission spectroscopy (UPS and XPS). The initial Au deposition quenches the Al q gap state caused by the alkali metal doping. Further Au depositions shift gradually the energy levels opposite to that induced by Cs doping, especially the highest occupied molecular orbital (HOMO) that shows approximately full recovery to the pristine Al q position. However, the recovery is only partial for other levels, most noticeably the C 1s core level. The results indicate that the gap state and energy level positions can be decoupled in the organic semiconductors, and that it is possible to fine tune the electronic structure by selective doping in the interface region.

scholarly journals Size-Dependent Optical Properties of Nanoscale and Bulk Long Persistent Phosphor SrAl2O4:Eu2+, Dy3+

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Xiaoxia Duan ◽  
Lixin Yi ◽  
Xiqing Zhang ◽  
Shihua Huang
Keyword(s):  
Energy Level ◽  
Band Gap ◽  
Vacuum Ultraviolet ◽  
Surface Defects ◽  
Surface Adsorption ◽  
Trap Depth ◽  
Level Shift ◽  
Excitation Spectra ◽  
Visible Spectra ◽  
Energy Level Shift

Nanoscale long persistent phosphor SrAl2O4:Eu2+, Dy3+was prepared by autocombustion of citrate gel. The energy level shift of activator Eu2+and coactivator Dy3+was analyzed according to the emission and the excitation spectra. The band gap change of SrAl2O4and the resulting trap depth change with particle size were discussed on the basis of analyzing the visible spectra, the vacuum ultraviolet (VUV) excitation spectra, and the thermoluminescence (TL) spectra. The fluorescence quenching and the shallow traps originating from surface adsorption or surface defects explain the weak initial persistent phosphorescence and the fast phosphorescence decay in nanometer SrAl2O4:Eu2+, Dy3+. It is confirmed that energy level, band gap, trap depth, defect, and surface adsorption are deeply related with each other in this nanoscale long persistent phosphor.

scholarly journals Estimate of theσKN(I=1)(0)-term value from the energy-level shift of kaonic hydrogen in the ground state

2006 ◽  
Vol 73 (3) ◽  
Author(s):  
A. N. Ivanov ◽  
M. Faber ◽  
V. A. Ivanova ◽  
J. Marton ◽  
N. I. Troitskaya
Keyword(s):  
Energy Level ◽  
Ground State ◽  
Level Shift ◽  
Kaonic Hydrogen ◽  
Energy Level Shift

Cs doping and energy level shift in CuPc

2003 ◽  
Vol 380 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
Yongli Gao ◽  
Li Yan
Keyword(s):  
Energy Level ◽  
Level Shift ◽  
Energy Level Shift

Nonstationary Casimir effect and oscillator energy level shift

1989 ◽  
Vol 142 (8-9) ◽  
pp. 511-513 ◽  
Author(s):  
V.V. Dodonov ◽  
A.B. Klimov ◽  
V.I. Man'ko
Keyword(s):  
Energy Level ◽  
Casimir Effect ◽  
Level Shift ◽  
Energy Level Shift ◽  
Nonstationary Casimir Effect

Measurement of Energy Level Shift of Ultracold Cesium Atoms by Raman Pump–Probe Spectroscopy

2012 ◽  
Vol 81 (10) ◽  
pp. 104301 ◽  
Author(s):  
Zhonghua Ji ◽  
Yanting Zhao ◽  
Jie Ma ◽  
Liantuan Xiao ◽  
Suotang Jia
Keyword(s):  
Energy Level ◽  
Level Shift ◽  
Pump Probe ◽  
Energy Level Shift ◽  
Probe Spectroscopy ◽  
Raman Pump ◽  
Cesium Atoms
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