Low-temperature (120°C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H2 gases: Microstructure characterization

2012 ◽  
Vol 258 (7) ◽  
pp. 3221-3226 ◽  
Author(s):  
L. Zhang ◽  
J.H. Gao ◽  
J.Q. Xiao ◽  
L.S. Wen ◽  
J. Gong ◽  
...  
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