Low-temperature (120°C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H2 gases: Microstructure characterization
2012 ◽
Vol 258
(7)
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pp. 3221-3226
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2006 ◽
Vol 253
(3)
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pp. 1198-1204
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1999 ◽
Vol 38
(Part 1, No. 10)
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pp. 6047-6053
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2002 ◽
Vol 41
(Part 1, No. 1)
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pp. 169-175
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