Effects of Addition of SiF4During Growth of Nanocrystalline Silicon Films Deposited at 100°C by Plasma-Enhanced Chemical Vapor Deposition

1999 ◽  
Vol 38 (Part 1, No. 10) ◽  
pp. 6047-6053 ◽  
Author(s):  
Atif Mossad Ali ◽  
Takao Inokuma ◽  
Yoshihiro Kurata ◽  
Seiichi Hasegawa
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