Unclassical ripple patterns in single-crystal silicon produced by femtosecond laser irradiation

2012 ◽  
Vol 263 ◽  
pp. 436-439 ◽  
Author(s):  
Wei Zhang ◽  
Guanghua Cheng ◽  
Qiang Feng
Keyword(s):  
Femtosecond Laser ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Single Crystal Silicon ◽  
Femtosecond Laser Irradiation ◽  
Crystal Silicon ◽  
Ripple Patterns

Nanostructuring of single-crystal silicon carbide by femtosecond laser irradiation in a liquid

2014 ◽  
Vol 22 (1) ◽  
pp. 15-18 ◽  
Author(s):  
E. V. Barmina ◽  
A. A. Serkov ◽  
G. A. Shafeev ◽  
E. Stratakis ◽  
C. Fotakis
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Single Crystal Silicon ◽  
Femtosecond Laser Irradiation ◽  
Crystal Silicon

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

2010 ◽  
Vol 645-648 ◽  
pp. 239-242 ◽  
Author(s):  
Takuro Tomita ◽  
M. Iwami ◽  
M. Yamamoto ◽  
M. Deki ◽  
Shigeki Matsuo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Specific Resistance ◽  
Single Crystal Silicon ◽  
Metal Contacts ◽  
Crystal Silicon ◽  
Current Voltage ◽  
Fs Laser ◽  
Current Voltage Characteristics

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltage characteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 m was obtained for fs-laser modified area.

Distinct Fine and Coarse Ripples on 4H-SiC Single Crystal Induced by Femtosecond Laser Irradiation

2006 ◽  
Vol 45 (No. 16) ◽  
pp. L444-L446 ◽  
Author(s):  
Takuro Tomita ◽  
Keita Kinoshita ◽  
Shigeki Matsuo ◽  
Shuichi Hashimoto
Keyword(s):  
Femtosecond Laser ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Femtosecond Laser Irradiation

Microscopic analysis of carbon phases induced by femtosecond laser irradiation on single-crystal SiC

2010 ◽  
Vol 100 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Takuro Tomita ◽  
Tatsuya Okada ◽  
Hiroyuki Kawahara ◽  
Ryota Kumai ◽  
Shigeki Matsuo ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Microscopic Analysis ◽  
Femtosecond Laser Irradiation ◽  
Single Crystal Sic

Oxidation Effects During the Formation of Buried Sb Dopant Profiles in Silicon Using Pulsed Laser Epitaxy

1991 ◽  
Vol 235 ◽  
Author(s):  
Randall J. Carolissen ◽  
R. Pretorius
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Oxidation Kinetics ◽  
Ruby Laser ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Heating Time ◽  
No Oxidation ◽  
Crystal Silicon ◽  
Oxygen Concentrations

ABSTRACTSevere oxidation inhibited epitaxy when buried Sb profiles in single crystal silicon were formed from evaporated layers irradiated in atmosphere with a pulsed Q-switched ruby laser. Oxygen concentrations as high as 5×1017atoms/cm2 (equivalent to 105nm SiO2) were measured. However, structures prepared without the Sb layer and irradiated under identical conditions, showed no oxidation. Oxidation of Sb as a source of the measured oxygen was ruled out, while the total heating time during laser irradiation is so short (nano- to milliseconds) that normal oxidation kinetics cannot account for the amount of SiO2 measured. Irradiations in vacuum and in a helium ambient showed that the oxygen responsible for these effects is supplied from the ambient in which irradiations are carried out. Also no oxidation was observed when structures, prepared on a substrate heated to 350°C, were irradiated in atmosphere. A model to account for these oxidation effects is proposed.

Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser Irradiation

1979 ◽  
Vol 42 (20) ◽  
pp. 1356-1358 ◽  
Author(s):  
Raphael Tsu ◽  
Rodney T. Hodgson ◽  
Teh Yu Tan ◽  
John E. Baglin
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Single Crystal Silicon ◽  
Uv Laser ◽  
Crystal Silicon ◽  
Disorder Transition

scholarly journals Generation of subsurface voids and a nanocrystalline surface layer in femtosecond laser irradiation of a single-crystal Ag target

2015 ◽  
Vol 91 (3) ◽  
Author(s):  
Chengping Wu ◽  
Martin S. Christensen ◽  
Juha-Matti Savolainen ◽  
Peter Balling ◽  
Leonid V. Zhigilei
Keyword(s):  
Surface Layer ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Femtosecond Laser Irradiation

scholarly journals Directionally controlled 3D ferroelectric single crystal growth in LaBGeO_5 glass by femtosecond laser irradiation

2009 ◽  
Vol 17 (25) ◽  
pp. 23284 ◽  
Author(s):  
Adam Stone ◽  
Masaaki Sakakura ◽  
Yasuhiko Shimotsuma ◽  
Greg Stone ◽  
Pradyumna Gupta ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Single Crystal Growth ◽  
Femtosecond Laser Irradiation ◽  
Ferroelectric Single Crystal
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