Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper

2013 ◽  
Vol 285 ◽  
pp. 545-551 ◽  
Author(s):  
Sean W. King ◽  
Marc French ◽  
Guanghai Xu ◽  
Benjamin French ◽  
Milt Jaehnig ◽  
...  
2013 ◽  
Vol 1576 ◽  
Author(s):  
Sean W. King ◽  
Marc French ◽  
Milt Jaehnig ◽  
Markus Kuhn

ABSTRACTIn order to understand the fundamental charge transport in a-B4-5C:H/Si heterostructure devices, we have utilized x-ray photoelectron spectroscopy to determine the valence band offset at interfaces formed by Plasma Enhanced Chemical Vapor Deposition of a-B4-5C:H on (100) Si. For such interfaces, we observed relatively small valence band offset values of ± 0.25 eV.


1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  

2007 ◽  
Vol 90 (13) ◽  
pp. 132105 ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
P. H. Jefferson ◽  
C. F. McConville ◽  
T. Wang ◽  
...  

2019 ◽  
Vol 90 ◽  
pp. 59-64 ◽  
Author(s):  
Nian Cheng ◽  
Weiwei Li ◽  
Shujie Sun ◽  
Zhiqiang Zhao ◽  
Zhenyu Xiao ◽  
...  

2010 ◽  
Vol 150 (41-42) ◽  
pp. 1991-1994 ◽  
Author(s):  
H.P. Song ◽  
G.L. Zheng ◽  
A.L. Yang ◽  
Y. Guo ◽  
H.Y. Wei ◽  
...  

2019 ◽  
Vol 114 (1) ◽  
pp. 011603 ◽  
Author(s):  
Guo-Dong Hao ◽  
Sachiko Tsuzuki ◽  
Shin-ichiro Inoue

2008 ◽  
Vol 93 (8) ◽  
pp. 082108 ◽  
Author(s):  
S. C. Su ◽  
Y. M. Lu ◽  
Z. Z. Zhang ◽  
C. X. Shan ◽  
B. H. Li ◽  
...  

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