Enhanced photoelectrochemical performance of Si nanowires by etching a single-crystal Si(100) wafer

2018 ◽  
Vol 448 ◽  
pp. 126-132 ◽  
Author(s):  
Linmeng Wang ◽  
Xiuquan Gu ◽  
Yulong Zhao ◽  
Meng Wei ◽  
Chunlai Huang ◽  
...  
2021 ◽  
Author(s):  
Fahimeh Shahvardanfard ◽  
Gihoon Cha ◽  
Nikita Denisov ◽  
Benedict Osuagwu ◽  
Patrik Schmuki

Single crystal anatase TiO2 nanosheets (TiO2-NSs) are grown hydrothermally on fluorine-doped tin oxide (FTO).


2016 ◽  
Vol 09 (03) ◽  
pp. 1650047 ◽  
Author(s):  
Jiajia Cai ◽  
Yinglei Liu ◽  
Song Li ◽  
Meiqi Gao ◽  
Dunwei Wang ◽  
...  

Hematite is currently considered one of the most promising photoanode materials for light-driven water splitting. The photoelectrochemical performance of hematite is limited by its low conductivity. In this work, we demonstrate that the conductivity of hematite films can be tuned by controlling the orientation of hematite crystals. By applying a high magnetic field (up to 10 T) during the drop-casting preparation, hematite films composed of single crystal particles show featured texture by promoting those particles alignment with (001) normal to the substrate. By enhancing the photocurrent densities with tuned hematite orientation, the current method provides an effective way for increasing the number of carriers that can reach the surface.


2007 ◽  
Vol 1018 ◽  
Author(s):  
Sung Jin Whang ◽  
Sung Joo Lee ◽  
Wei Feng Yang ◽  
Hai Chen Zhu ◽  
Han Lu Gu ◽  
...  

AbstractWe successfully synthesized high quality single crystal Si nanowires using Al catalyst via vapor-liquid-solid (VLS) mechanism, having diameters ranging from 10 to 200 nm with 10∽20 §­ of length. Characterization of physical and chemical properties of Al-catalyzed Si nanowires using transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) analysis showed that single crystal Si nanowires can be grown with Al-catalyst at 540 ¡C and selective etching of Al existing at the tip of nanowire can provide metal-free Si nanowires that are compatible with conventional Si-based IC process. By using plasma doping method, it was confirmed that the doping level can be controlled and the boron was successfully introduced on Si substrate with 3×1022/cm3 of peak doping concentration.


RSC Advances ◽  
2016 ◽  
Vol 6 (82) ◽  
pp. 78564-78569 ◽  
Author(s):  
H. Yu ◽  
F. Fan ◽  
S. Wu ◽  
H. Zhang ◽  
N. Lu ◽  
...  

The energetic photoelectrochemical performance of an Ag nanoparticle-decorated Si-nanowire-grafted Si micropillar array and its capability in the control of halogenated pollutants are reported.


Rare Metals ◽  
2019 ◽  
Vol 38 (5) ◽  
pp. 369-378 ◽  
Author(s):  
Ying Chen ◽  
Shi Li ◽  
Ruo-Yu Zhao ◽  
Wei Li ◽  
Zhao-Hui Ren ◽  
...  

2015 ◽  
Vol 17 (2) ◽  
pp. 800-804 ◽  
Author(s):  
Xiaopeng Li ◽  
Yanjun Xiao ◽  
Keya Zhou ◽  
Junna Wang ◽  
Stefan L. Schweizer ◽  
...  

The photoelectrochemical performance of Si nanowires can be greatly improved both in photocurrent and photovoltage through a tapering process.


2010 ◽  
Vol 256 (6) ◽  
pp. 1744-1748 ◽  
Author(s):  
Jin-Young Jung ◽  
Sang-Won Jee ◽  
Jung-Ho Lee
Keyword(s):  

2021 ◽  
Author(s):  
Bin Gao ◽  
Tao Wang ◽  
Hairong Xue ◽  
Cheng Jiang ◽  
Lei Sheng ◽  
...  

The single-crystal BiVO4 photoanode with surface nanostructure is prepared by a low-cost and simple etching process. As a result, the modified photoanode shows a higher photocurrent density and a lower...


2012 ◽  
Vol 100 (8) ◽  
pp. 082110 ◽  
Author(s):  
M. Jivanescu ◽  
A. Stesmans ◽  
R. Kurstjens ◽  
F. Dross
Keyword(s):  

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