Porous Tantalum Nitride Single Crystal at Two‐Centimeter Scale with Enhanced Photoelectrochemical Performance

2020 ◽  
Vol 59 (23) ◽  
pp. 8891-8895 ◽  
Author(s):  
Lu Jin ◽  
Fangyuan Cheng ◽  
Hao Li ◽  
Kui Xie
2021 ◽  
Author(s):  
Fahimeh Shahvardanfard ◽  
Gihoon Cha ◽  
Nikita Denisov ◽  
Benedict Osuagwu ◽  
Patrik Schmuki

Single crystal anatase TiO2 nanosheets (TiO2-NSs) are grown hydrothermally on fluorine-doped tin oxide (FTO).


2018 ◽  
Vol 448 ◽  
pp. 126-132 ◽  
Author(s):  
Linmeng Wang ◽  
Xiuquan Gu ◽  
Yulong Zhao ◽  
Meng Wei ◽  
Chunlai Huang ◽  
...  

2016 ◽  
Vol 09 (03) ◽  
pp. 1650047 ◽  
Author(s):  
Jiajia Cai ◽  
Yinglei Liu ◽  
Song Li ◽  
Meiqi Gao ◽  
Dunwei Wang ◽  
...  

Hematite is currently considered one of the most promising photoanode materials for light-driven water splitting. The photoelectrochemical performance of hematite is limited by its low conductivity. In this work, we demonstrate that the conductivity of hematite films can be tuned by controlling the orientation of hematite crystals. By applying a high magnetic field (up to 10 T) during the drop-casting preparation, hematite films composed of single crystal particles show featured texture by promoting those particles alignment with (001) normal to the substrate. By enhancing the photocurrent densities with tuned hematite orientation, the current method provides an effective way for increasing the number of carriers that can reach the surface.


1990 ◽  
Vol 181 ◽  
Author(s):  
Karen Holloway ◽  
Peter Fryer

ABSTRACTWe have investigated the effectiveness of thin tantalum layers as diffusion barriers to copper. Fifty nm Ta films were sputtered onto unpatterned single crystal Si wafers and overlaid with 100 nm Cu. Material reactions in these films were followed as a function of annealing temperature by in-situ resistance measurements, and characterized by by Rutherford Backscattering and cross-section TEM. The effect of the incorporation of nitrogen was explored by reactively depositing Ta(5 at.% N) and Ta2N. Pure Ta prevents Cu - silicon interaction to at least 600 °C. At higher temperatures, reaction of the Si substrate with Ta forms a planar TaSi2 layer. Cu rapidly penetrates to the Si substrate, forming Cu silicide precipitates at the TaSi2 - Si interface. A study performed on the Si/Ta(N)/Cu film had very similar results. Ta2N is an even more effective barrier to copper penetration, preventing Cu reaction with the substrate for temperatures up to at least 700 °C.


Rare Metals ◽  
2019 ◽  
Vol 38 (5) ◽  
pp. 369-378 ◽  
Author(s):  
Ying Chen ◽  
Shi Li ◽  
Ruo-Yu Zhao ◽  
Wei Li ◽  
Zhao-Hui Ren ◽  
...  

2021 ◽  
Author(s):  
Bin Gao ◽  
Tao Wang ◽  
Hairong Xue ◽  
Cheng Jiang ◽  
Lei Sheng ◽  
...  

The single-crystal BiVO4 photoanode with surface nanostructure is prepared by a low-cost and simple etching process. As a result, the modified photoanode shows a higher photocurrent density and a lower...


2017 ◽  
Vol 46 (32) ◽  
pp. 10635-10640 ◽  
Author(s):  
Wei Jiao ◽  
Jingrui Wu ◽  
Siwen Cui ◽  
Ning Wei ◽  
Zia Ur Rahman ◽  
...  

Hollow and single crystal α-Fe2O3 was prepared by a hydrothermal method, which showed enhanced PEC performance on coating with ultra-thin Al2O3.


2021 ◽  
Vol 125 (15) ◽  
pp. 8098-8104
Author(s):  
Wenting Li ◽  
Fangyuan Cheng ◽  
Lu Jin ◽  
Qingping Wu ◽  
Kui Xie

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xu-Dong Wang ◽  
Yu-Hua Huang ◽  
Jin-Feng Liao ◽  
Ze-Feng Wei ◽  
Wen-Guang Li ◽  
...  

AbstractHalide perovskite single-crystals have recently been widely highlighted to possess high light harvesting capability and superior charge transport behaviour, which further enable their attractive performance in photovoltaics. However, their application in photoelectrochemical cells has not yet been reported. Here, a methylammonium lead bromide MAPbBr3 single-crystal thin film is reported as a photoanode with potential application in photoelectrochemical organic synthesis, 2,5-dimethoxy-2,5-dihydrofuran. Depositing an ultrathin Al2O3 layer is found to effectively passivate perovskite surface defects. Thus, the nearly 5-fold increase in photoelectrochemical performance with the saturated current being increased from 1.2 to 5.5 mA cm−2 is mainly attributed to suppressed trap-assisted recombination for MAPbBr3 single-crystal thin film/Al2O3. In addition, Ti3+-species-rich titanium deposition has been introduced not only as a protective film but also as a catalytic layer to further advance performance and stability. As an encouraging result, the photoelectrochemical performance and stability of MAPbBr3 single-crystal thin film/Al2O3/Ti-based photoanode have been significantly improved for 6 h continuous dimethoxydihydrofuran evolution test with a high Faraday efficiency of 93%.


Sign in / Sign up

Export Citation Format

Share Document