Formation of graphene-capped cobalt silicides

2019 ◽  
Vol 470 ◽  
pp. 840-845 ◽  
Author(s):  
G.S. Grebenyuk ◽  
S.M. Dunaevsky ◽  
E.Yu. Lobanova ◽  
D.A. Smirnov ◽  
I.I. Pronin
Keyword(s):  
Cobalt Silicides

Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications

1995 ◽  
Vol 402 ◽  
Author(s):  
G. T. Sarcona ◽  
M. K. Hatalis
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Thin Film Transistor ◽  
Surface Preparation ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Cobalt Nickel ◽  
Silicon Materials ◽  
Cobalt Silicides ◽  
Matrix Liquid

AbstractThin films of cobalt, nickel, and tungsten were sputtered on three types of silicon materials to explore their potential for use as silicides in thin film transistor technologies for active matrix liquid crystal displays. The metals were sputtered onto single-crystal, polycrystalline, and amorphous silicon. The metals were annealed in vacuum after deposition over temperatures ranging from 250°C to 750°C. The sheet resistance of the resulting silicide films was measured using a four point probe apparatus. Cobalt silicides with sheet resistance of less than 4 Ω/ were formed at 600°C. Nickel produced films with sheet resistance below 10 Ω/▪ at 350°C, though the surface was required to be vacuum-clean. In this study, tungsten did not produce silicides. Surface preparation has been found to be an important factor in tungsten and nickel silicidation.

Positron beam studies of cobalt silicides

2008 ◽  
Vol 255 (1) ◽  
pp. 237-240
Author(s):  
S. Abhaya ◽  
G. Amarendra
Keyword(s):  
Positron Beam ◽  
Cobalt Silicides

Intercalation Synthesis of Cobalt Silicides under Graphene Grown on Silicon Carbide

2020 ◽  
Vol 62 (3) ◽  
pp. 519-528
Author(s):  
G. S. Grebenyuk ◽  
I. A. Eliseev ◽  
S. P. Lebedev ◽  
E. Yu. Lobanova ◽  
D. A. Smirnov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Cobalt Silicides

Morphological instabilities of nickel and cobalt silicides on silicon

1991 ◽  
Vol 53 ◽  
pp. 87-91 ◽  
Author(s):  
S. Nygren ◽  
D. Caffin ◽  
M. Östling ◽  
F.M. d'Heurle
Keyword(s):  
Morphological Instabilities ◽  
Cobalt Silicides

Stress in Silicon Due to the Formation of Self Aligned Poly-CoSi2 Lines Studied by Micro-Raman Spectroscopy

1995 ◽  
Vol 402 ◽  
Author(s):  
D. J. Howard ◽  
I. De Wolf ◽  
H. Bender ◽  
K. Maex
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Cross Section ◽  
Line Width ◽  
Silicon Substrate ◽  
Theoretical Modeling ◽  
Micro Raman Spectroscopy ◽  
Thermal Oxide ◽  
Stress Profiles ◽  
Cobalt Silicides

AbstractThe application of CoSi2 in ever shrinking Si CMOS source-drain technologies demands a better knowledge of the states of stress caused by the formation of cobalt-silicides in Si. In this study the variation in local mechanical stress in the silicon substrate near arrays of polycrystalline cobalt-silicide lines was investigated by micro-Raman spectroscopy. The lines were formed by annealing Co sputtered in windows in lithographically patterned, thermal oxide coated Si wafers. The CoSi2 lines varied in width from ˜0.25 to 5.0μ, in number from 2 to 7, and in thickness from ˜ 10 to 230nm. The spacing between lines was 1 and 3 times the line width.Trends in the Si stress between CoSi2 lines are described as a function of line width and line thickness. From the stress measured in the Si, information is obtained about the stress in the CoSi2 lines. In addition, the Si stress due to lines of primarily CoSi phase (monosilicide) is compared with the Si stress due to polycrystalline-CoSi2 (disilicide) lines.Cross section TEM and SEM micrographs of the CoSix line morphologies are used to aid the description of the resulting stress profiles. Some theoretical modeling of the stress in the Si due to the CoSix lines is presented for comparison with the micro-Raman spectroscopy results.

A Comparison of Transient Annealing Methods for Silicide Formation

1984 ◽  
Vol 37 ◽  
Author(s):  
R. E. Harper ◽  
C. J. Sofield ◽  
I. H. Wilson ◽  
K. G. Stephens
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Light Element ◽  
Metal Films ◽  
Silicon Wafers ◽  
Silicide Formation ◽  
Elastic Recoil ◽  
Surface Textures ◽  
Good Crystalline Quality ◽  
Cobalt Silicides

AbstractNickel and cobalt silicides have been formed by raster-scanned electron beam and flash-lamp irradiation of thin metal films on single crystal (100) and (111) silicon wafers. RBS and channelling measurements indicate that the NiSi2 is epitaxial and of good crystalline quality (Xmin 4% on (111)); epitaxial CoSi2 was more difficult to form and of somewhat poorer quality. The elastic recoil technique has been used to determine bulk and interfacial light element contamination. These measurements have been correlated with resistivity and SEM studies of the surface textures.

Preparation and properties of cobalt silicides by diffusion and CVD processes using Si2Cl6 as a silicon source

1986 ◽  
Vol 124 (1-2) ◽  
pp. 193-204 ◽  
Author(s):  
Seiji Motojima ◽  
Shinichi Kuri ◽  
Tatsuhiko Hattori
Keyword(s):  
Silicon Source ◽  
Cobalt Silicides
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