Electronic and optical properties of van der Waals heterostructures of g-GaN and transition metal dichalcogenides

2019 ◽  
Vol 492 ◽  
pp. 513-519 ◽  
Author(s):  
Zhen Cui ◽  
Kai Ren ◽  
Yiming Zhao ◽  
Xia Wang ◽  
Huabing Shu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Van Der Waals Heterostructures ◽  
Electronic And Optical Properties ◽  
Metal Dichalcogenides

Synergistic vacancy defects and mechanical strain for the modulation of the mechanical, electronic and optical properties of monolayer tungsten disulfide

2021 ◽  
Vol 23 (10) ◽  
pp. 6298-6308
Author(s):  
Chan Gao ◽  
Xiaoyong Yang ◽  
Ming Jiang ◽  
Lixin Chen ◽  
Zhiwen Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Mechanical Strain ◽  
Transition Metal Dichalcogenides ◽  
Strain Engineering ◽  
Tungsten Disulfide ◽  
Defect Engineering ◽  
Vacancy Defects ◽  
Electronic And Optical Properties ◽  
Metal Dichalcogenides

The combination of defect engineering and strain engineering for the modulation of the mechanical, electronic and optical properties of monolayer transition metal dichalcogenides (TMDs).

Intriguing electronic structures and optical properties of two-dimensional van der Waals heterostructures of Zr2CT2 (T = O, F) with MoSe2 and WSe2

2018 ◽  
Vol 6 (11) ◽  
pp. 2830-2839 ◽  
Author(s):  
Gul Rehman ◽  
S. A. Khan ◽  
B. Amin ◽  
Iftikhar Ahmad ◽  
Li-Yong Gan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Material Properties ◽  
First Principles ◽  
Electronic Structures ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Van Der Waals Heterostructures ◽  
Metal Dichalcogenides

Based on (hybrid) first-principles calculations, material properties (structural, electronic, vibrational, optical, and photocatalytic) of van der Waals heterostructures and their corresponding monolayers (transition metal dichalcogenides and MXenes) are investigated.

scholarly journals A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

RSC Advances ◽  
2020 ◽  
Vol 10 (51) ◽  
pp. 30529-30602 ◽  
Author(s):  
Hari Singh Nalwa
Keyword(s):  
Transition Metal ◽  
Molybdenum Disulfide ◽  
Strong Interaction ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Flexible Devices ◽  
Metal Dichalcogenides ◽  
Self Powered

Two-dimensional transition metal dichalcogenides have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures with other nanomaterials.

Tunable coupling of terahertz Dirac plasmons and phonons in transition metal dichalcogenide-based van der Waals heterostructures

2D Materials ◽  
2021 ◽  
Author(s):  
Icaro Rodrigues Lavor ◽  
Andrey Chaves ◽  
Francois M Peeters ◽  
Ben Van Duppen
Keyword(s):  
Transition Metal ◽  
Fermi Energy ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
Phonon Coupling ◽  
Van Der Waals Heterostructures ◽  
Composition And Structure ◽  
Metal Dichalcogenides ◽  
Tunable Coupling

Abstract Dirac plasmons in graphene hybridize with phonons of transition metal dichalcogenides (TMDs) when the materials are combined in so-called van der Waals heterostructures (vdWh), thus forming surface plasmon-phonon polaritons (SPPPs). The extend to which these modes are coupled depends on the TMD composition and structure, but also on the plasmons' properties. By performing realistic simulations that account for the contribution of each layer of the vdWh separately, we calculate how the strength of plasmon-phonon coupling depends on the number and composition of TMD layers, on the graphene Fermi energy and the specific phonon mode. From this, we present a semiclassical theory that is capable of capturing all relevant characteristics of the SPPPs. We find that it is possible to realize both strong and ultra-strong coupling regimes by tuning graphene's Fermi energy and changing TMD layer number.

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