Inorganic cesium lead halide perovskites, as alternative light absorbers for organic–inorganic hybrid perovskite solar cells, have attracted more and more attention due to their superb thermal stability for photovoltaic applications. However, the humid air instability of CsPbI2Br perovskite solar cells (PSCs) hinders their further development. The optoelectronic properties of CsPbI2Br films are closely related to the quality of films, so preparing high-quality perovskite films is crucial for fabricating high-performance PSCs. For the first time, we demonstrate that the regulation of ambient temperature of the dry air in the glovebox is able to control the growth of CsPbI2Br crystals and further optimize the morphology of CsPbI2Br film. Through controlling the ambient air temperature assisted crystallization, high-quality CsPbI2Br films are obtained, with advantages such as larger crystalline grains, negligible crystal boundaries, absence of pinholes, lower defect density, and faster carrier mobility. Accordingly, the PSCs based on as-prepared CsPbI2Br film achieve a power conversion efficiency of 15.5% (the maximum stabilized power output of 15.02%). Moreover, the optimized CsPbI2Br films show excellent robustness against moisture and oxygen and maintain the photovoltaic dark phase after 3 h aging in an air atmosphere at room temperature and 35% relative humidity (R.H.). In comparison, the pristine films are completely converted to the yellow phase in 1.5 h.
Overcoming Short-Circuit in Lead-Free CH3NH3SnI3 Perovskite Solar Cells via Kinetically Controlled Gas–Solid Reaction Film Fabrication Process
