Nd-doped ZnO films grown on c-cut sapphire by pulsed-electron beam deposition under oblique incidence

2021 ◽  
pp. 150287
Author(s):  
M. Nistor ◽  
E. Millon ◽  
C. Cachoncinlle ◽  
C. Ghica ◽  
C. Hebert ◽  
...  
Keyword(s):  
Electron Beam ◽  
Oblique Incidence ◽  
Zno Films ◽  
Pulsed Electron Beam ◽  
Electron Beam Deposition ◽  
Doped Zno ◽  
Beam Deposition ◽  
Pulsed Electron Beam Deposition

scholarly journals Poly(propylene)/carbon composite thin films obtained by pulsed electron-beam deposition

2018 ◽  
Vol 15 (7) ◽  
pp. 1700239 ◽  
Author(s):  
Roman Jędrzejewski ◽  
Joanna Piwowarczyk ◽  
Anna Jędrzejewska ◽  
Konrad Kwiatkowski ◽  
Jolanta Baranowska
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Carbon Composite ◽  
Composite Thin Films ◽  
Pulsed Electron Beam ◽  
Electron Beam Deposition ◽  
Poly Propylene ◽  
Propylene Carbon ◽  
Beam Deposition ◽  
Pulsed Electron Beam Deposition

Polytetrafluoroethylene thin films obtained by the pulsed electron beam deposition method at different gas pressures

Polimery ◽  
2017 ◽  
Vol 62 (10) ◽  
pp. 743-749 ◽  
Author(s):  
Roman Jedrzejewski ◽  
Joanna Piwowarczyk ◽  
Konrad Kwiatkowski ◽  
Jolanta Baranowska
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Deposition Method ◽  
Pulsed Electron Beam ◽  
Electron Beam Deposition ◽  
Beam Deposition ◽  
Gas Pressures ◽  
Pulsed Electron Beam Deposition

GaN growth on silicon based substrates using pulsed electron beam deposition (PED) process

2015 ◽  
Vol 1736 ◽  
Author(s):  
Nazmul Arefin ◽  
Matthew H. Kane ◽  
Preston R. Larson ◽  
Vince R. Whiteside ◽  
Khalid Hossain ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Characterization ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Pulsed Electron Beam ◽  
Electron Beam Deposition ◽  
Pre Treatment ◽  
Gan On Si ◽  
Beam Deposition ◽  
Pulsed Electron Beam Deposition

ABSTRACTGrowth of GaN on Si(111) and Ge coated Si(111) using pulsed electron beam deposition (PED) process is reported. GaN was deposited on Si(111) and Ge/Si(111) at 600°C in an N2 environment without any surface pre-treatment such as pre-nitridation. X-ray diffraction confirmed that c-plane oriented GaN was grown. Photoluminescence showed near-band-edge emission, the intensity of which was improved with hydrogen passivation. Electrical characterization showed n-type conductivity with room temperature electron mobilities in the range of 300 cm2/V-sec.

Growth of group III nitride films by pulsed electron beam deposition

2009 ◽  
Vol 182 (5) ◽  
pp. 1241-1244 ◽  
Author(s):  
J. Ohta ◽  
K. Sakurada ◽  
F.-Y. Shih ◽  
A. Kobayashi ◽  
H. Fujioka
Keyword(s):  
Electron Beam ◽  
Pulsed Electron Beam ◽  
Group Iii ◽  
Electron Beam Deposition ◽  
Group Iii Nitride ◽  
Beam Deposition ◽  
Pulsed Electron Beam Deposition

scholarly journals Epitaxial ZnO thin films grown by pulsed electron beam deposition

2010 ◽  
Vol 604 (21-22) ◽  
pp. 2024-2030 ◽  
Author(s):  
S. Tricot ◽  
M. Nistor ◽  
E. Millon ◽  
C. Boulmer-Leborgne ◽  
N.B. Mandache ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Zno Thin Films ◽  
Pulsed Electron Beam ◽  
Electron Beam Deposition ◽  
Beam Deposition ◽  
Pulsed Electron Beam Deposition
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