Band Bending at Heterovalent Interfaces: Hard X-ray Photoelectron Spectroscopy of GaP/Si(001) Heterostructures

2021 ◽  
pp. 150514
Author(s):  
O. Romanyuk ◽  
A. Paszuk ◽  
I. Bartoš ◽  
R.G. Wilks ◽  
M. Nandy ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Band Bending ◽  
X Ray

scholarly journals Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

2016 ◽  
Vol 120 (14) ◽  
pp. 145703 ◽  
Author(s):  
B. Khanbabaee ◽  
G. Bussone ◽  
J. V. Knutsson ◽  
I. Geijselaers ◽  
C. E. Pryor ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Shell ◽  
Band Bending ◽  
X Ray ◽  
Shell Nanowires

Band bending at free Pb(Zr,Ti)O3 surfaces analyzed by X-ray photoelectron spectroscopy

2013 ◽  
Vol 178 (19) ◽  
pp. 1317-1322 ◽  
Author(s):  
Nicoleta G. Apostol ◽  
Laura E. Stoflea ◽  
George A. Lungu ◽  
Cristian A. Tache ◽  
Dana G. Popescu ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Band Bending ◽  
X Ray

Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending

2014 ◽  
Vol 778-780 ◽  
pp. 566-570 ◽  
Author(s):  
Wei Huang ◽  
Xi Liu ◽  
Xue Chao Liu ◽  
Tian Yu Zhou ◽  
Shi Yi Zhuo ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Interface Energy ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Band Bending ◽  
X Ray ◽  
Vacuum Chambers ◽  
Transmission Electron ◽  
Electron Transport Properties

Native oxide layer with thickness of about 1 nm was found easy to form on 6H-SiC surface during transporting from cleaning process to vacuum chambers, which was examined by x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). The interface band bending was studied by synchrotron radiation photoelectron spectroscopy (SRPES). For the native-oxide/SiC surface, after Ni deposition, the binding energy of Si 2p red-shifted about 0.34 eV, which suggested the upward bending of the interface energy band. Therefore, the native oxide layer should be considered on the study of SiC devices because it may affect the electron transport properties significantly.

Band Bending of n-GaN under Ambient H2O Vapor Studied by X-ray Photoelectron Spectroscopy

2021 ◽  
Author(s):  
Yuki Imazeki ◽  
Masahiro Sato ◽  
Takahito Takeda ◽  
Masaki Kobayashi ◽  
Susumu Yamamoto ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Band Bending ◽  
X Ray

scholarly journals Влияние обработки в парах серы на скорость термооксидирования InP, состав, морфологию поверхности и свойства плёнок

2019 ◽  
Vol 21 (2) ◽  
pp. 296-305
Author(s):  
Olga S. Tarasova ◽  
Aleksey I. Dontsov ◽  
Boris V. Sladkopevtsev ◽  
Irina Y. Mittova
Keyword(s):  
Thermal Oxidation ◽  
Surface Science ◽  
Photoelectron Spectroscopy ◽  
Structural Model ◽  
Materials Science ◽  
Inorganic Materials ◽  
Applied Physics ◽  
Type Conversion ◽  
Band Bending ◽  
X Ray

Предложена методика модифицирования InP в парах серы, методом локального рентгеноспектрального микроанализа подтверждено её наличие на поверхности. Дляплёнок нанометрового диапазона толщины (до 50 нм), выращенных термическим оксидированием InP с предварительно обработанной в парах серы поверхностью, методом Оже-электронной спектроскопии установлено послойное распределение компонентов. По данным атомно-силовой микроскопии модифицирование InP серой приводит к формированию поверхности с зернистой структурой, более упорядоченной по сравнению с эталоном (собственное термооксидирование фосфида индия). Несмотря на то, что в результирующих плёнках сера не обнаружена, они обладают полупроводниковыми свойствами, тогда как для собственных оксидных слоёв на InP характерна омическая проводимость     REFERENCES Markov V. F., Mukhamedzyanov Kh. N., Maskaeva L. N. Materialy sovremennoj jelektroniki [Materials of modern electronics]. Ekaterinburg, Publishing Ural. un-one, 2014, 272 p. (in Russ.) Oktyabrsky S. Fundamentals of III-V Semiconductor MOSFETs. Springer Science LCC, 2013, 447 p. Bessolov V. N., Lebedev M. V. Hal’kogenidnaja passivacija poluprovodnikov AIIIBV [Chalcogenide passivation of III–V semiconductor surfaces]. Semiconductors, 1998, v. 32(11), pp. 1141–1156. https://doi.org/10.1134/1.1187580 Mittova I. Ya., Soshnikov M., Terekhov V. A., Semenov V. N. Termicheskoe oksidirovanie geterostruktur V2S5/InP v kislorode [Thermal oxidation of V2S5/InP heterostructures in oxygen]. Inorganic Materials, 2000, v. 36(10), pp. 975–978. https://doi.org/10.1007/BF02757971 Yoshida N., Chichibu S., Akane T., Totsuka M., Uji H., Matsumoto S., Higuchi H. Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient. Applied Physics Letters, 1993, v. 63(22), pp. 3035–3037. https://doi.org/10.1063/1.110250 Liu K. Z., Shimomura M., Fukuda Y. Band Bending of n-GaP(001) and p-InP(001) Surfaces with and without sulfur treatment studied by Photoemission (PES) and Inverse Photoemission Spectroscopy (IPES). Advanced Materials Research, 2011, v. 222, pp. 56–61. https://doi.org/10.4028/www.scientific.net/AMR.222.56 Tian Sh., Wei Zh., Li Y., Zhao H., Fang X. Surface state and optical property of sulfur passivated InP. Materials Science in Semiconductor Processing, 2014, v. 17, pp. 33–37. https://doi.org/10.1016/j.mssp.2013.08.008 Sundararaman C. S., Poulin S., Currie J. F., Leonelli R. The sulfur-passivated InP surface. Canadian Journal of Physics, 2011, v. 69(3–4), pp. 329–332. https://doi.org/10.1139/p91-055 Lau W. M., Kwok R. W. M., Ingrey S. Controlling surface band-bending of InP with polysulfi de treatments. Surface Science, 1992, v. 271(3), pp. 579–586. https://doi.org/10.1016/0039-6028(92)90919-W Tao Y., Yelon A., Sacher E., Lu Z. H., Graham M. J. S-passivated InP (100)-(1×1) surface prepared by a wet chemical process. Applied Physics Letters, 1992, v. 60(21), pp. 2669–2671. https://doi.org/10.1063/1.106890 Chasse T., Peisert H., Streubel P., Szargan R. Sulfurization of InP(001) surfaces studied by X-ray photoelectron and X-ray induced Auger electron spectroscopies (XPS/XAES). Surface Science, 1995, v. 331–333, pp. 434–440. https://doi.org/10.1016/0039-6028(95)00306-1 Maeyama S., Sugiyama M., Heun S., Oshima M. Electron J. (NH4)2Sx-treated InP(100) surfaces studied by soft x-ray photoelectron spectroscopy. Journal of Electronic Materials, 1996, v. 25(5), pp. 593–596. https://doi.org/10.1007/BF02666509 Sugahara H., Oshima M., Klauser R. Bonding states of chemisorbed sulfur atoms on GaAs. Surface Science, 1991, v. 242(1–3), pp. 335–340. https://doi.org/10.1016/0039-6028(91)90289-5 Koebbel A., Leslie A., Dudzik E., Mitchell C. E. J. X-ray standing wave study of wet-etch sulphur-treated InP 100 surfaces. Applied Surface Science, 2000, v. 166(1–4), pp. 196–200. https://doi.org/10.1016/S0169-4332(00)00413-X Nelson A. J., Frigo S. P., Rosenberg R. Soft x-ray photoemission characterization of the H2S exposed surface of p-InP. Journal of Applied Physics, 1992, v. 71(12), pp. 6086–6089. https://doi.org/10.1063/1.350415 Nelson A. J., Frigo S. P., Rosenberg R. Surface type conversion of InP by H2S plasma exposure: A photoemission investigation. Journal of Vacuum Science & Technology A, 1993, v. 11(4), pp. 1022–1027. https://doi.org/10.1116/1.578807 Kwok R. W. M., Lau W. M. X-ray photoelectron spectroscopy study on InP treated by sulfur containing compounds. Journal of Vacuum Science & Technology A, 1992, v. 10(4), pp. 2515–2520. https://doi.org/10.1116/1.578091 Wang X., Weinberg W. H. Structural model of sulfur on GaAs(100). Journal of Applied Physics, 1994, v. 75(5), pp. 2715–2717. https://doi.org/10.1063/1.356203 Berkovits V. L., Paget D. Optical study of surface dimers on sulfur-passivated (001)GaAs. Applied Physics Letters, 1992, v. 61(15), pp. 1835–1837. https://doi.org/10.1063/1.108390 Bessolov V. N., Konenkova E. V., Lebedev M. V. Sulfi dization of GaAs in alcoholic solutions: a method having an impact on effi ciency and stability of passivation. Materials Science and Engineering: B, 1997, v. 44(1–3), pp. 376–379. https://doi.org/10.1016/S0921-5107(96)01816-8 Sladkopevtsev B. V., Mittova I. Ya., Tomina E. V., Burtseva N. A. Growth of vanadium oxide fi lms on InP under mild conditions and thermal oxidation of the resultant structures. Inorganic Materials, 2012, v. 48(2), pp. 161–168. https://doi.org/10.1134/S0020168512020173 Tretyakov N. N., Mittova I. Ya., Sladkopevtcev B. V., Samsonov A. A. Vlijanie magnetronno napylennogo sloja MnO2 na kinetiku termooksidirovanija InP, sostav i morfologiju sintezirovannyh plenok [The effect of the magnetron-deposited MnO2 layer on the InP thermal oxidation kinetics, composition and morphology of the synthesized fi lms]. Inorganic Materials, 2017, v. 53(1), pp. 41–48. https://doi.org/10.7868/S0002337X17010171   (in Russ.)

In-Situ XPS Study of the Aluminum Poly(p-Phenylenevinylene) Interface

1995 ◽  
Vol 385 ◽  
Author(s):  
K. Konstadinidis ◽  
F. Papadimitrakopoulos ◽  
M. Galvin ◽  
R. Opila
Keyword(s):  
Valence Band ◽  
Oxygen Content ◽  
Photoelectron Spectroscopy ◽  
Surface Oxygen ◽  
Band Bending ◽  
X Ray ◽  
In Situ Xps ◽  
Synthetic Routes ◽  
Xps Study

ABSTRACTThe chemical and electronic properties of aluminum/poly(p-phenylenevinylene) (PPV) interfaces were studied in situ using x-ray photoelectron spectroscopy (XPS). It was observed that the aluminum atoms react with the oxygen-containing groups present as impurities on the surface of PPV to form Al-O-C linkages. The Al atoms also interact with the wrsystem of the polymer as indicated by changes in the valence band. Contrary to to recent suggestions (Ettedgui et al.) the relation between surface oxygen content and band bending is not straightforward, as shown by deposition on PPV surfaces prepared by two different synthetic routes.

scholarly journals Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN

2021 ◽  
Author(s):  
Jiarui Gong ◽  
Kuangye Lu ◽  
Jisoo Kim ◽  
Tien Khee Ng ◽  
Donghyeok Kim ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Band ◽  
Band Bending ◽  
X Ray ◽  
The Poor ◽  
P Type

Abstract The recently demonstrated approach of grafting n-type GaN with p-type Si or GaAs, by employing ultrathin Al2O3 at the interface, has shown the feasibility to overcome the poor p-type doping challenge of GaN. However, the surface band-bending of GaN that could be influenced by the Al2O3 has been unknown. In this work, the band-bending of c-plane, Ga-face GaN with ultrathin Al2O3 deposition at the surface of GaN was studied using X-ray photoelectron spectroscopy (XPS). The study shows that the Al2O3 can help suppress the upward band-bending of the c-plane, Ga-face GaN with a monotonic reduction trend from 0.48 eV down to 0.12 eV as the number of Al2O3 deposition cycles increases from 0 to 20. The study further shows that the band-bending can be mostly recovered after removing the Al2O3 layer, concurring that the introduction of ultrathin Al2O3 is the main reason for the surface band-bending modulation.

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