Reduction of Leakage Current in Amorphous Oxide-Semiconductor Top-gated Thin Film Transistors by Interface Engineering with Dipolar Self-Assembled Monolayers

2021 ◽  
pp. 151029
Author(s):  
Ya-Hsiang Liang ◽  
Saravanan Kumaran ◽  
Michael Zharnikov ◽  
Yian Tai
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Self Assembled Monolayers ◽  
Interface Engineering ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Assembled Monolayers ◽  
Self Assembled

Recent progress in interface engineering of organic thin film transistors with self-assembled monolayers

2018 ◽  
Vol 2 (1) ◽  
pp. 11-21 ◽  
Author(s):  
Danqing Liu ◽  
Qian Miao
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Recent Progress ◽  
Organic Thin Film Transistors ◽  
Self Assembled Monolayers ◽  
Organic Thin Film ◽  
Interface Engineering ◽  
Assembled Monolayers ◽  
Basic Concepts ◽  
Self Assembled

This review introduces basic concepts and recent progress in self-assembled monolayers as a powerful tool for interface engineering of organic thin film transistors.

InGaZnO thin-film transistors with back channel modification by organic self-assembled monolayers

2014 ◽  
Vol 104 (5) ◽  
pp. 051607 ◽  
Author(s):  
Peng Xiao ◽  
Linfeng Lan ◽  
Ting Dong ◽  
Zhenguo Lin ◽  
Wen Shi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled
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