(Invited) Channel Width and Channel Length Dependencies in Amorphous-Oxide-Semiconductor Thin-Film Transistors: From a Device Structure Perspective

2013 ◽  
Vol 50 (8) ◽  
pp. 151-159 ◽  
Author(s):  
M. Mativenga ◽  
J. K. Um ◽  
R. Mruthyunjaya ◽  
J. H. Chang ◽  
G. N. Heiler ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Channel Width ◽  
Oxide Semiconductor ◽  
Device Structure ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Semiconductor Thin Film

Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

2009 ◽  
Vol 95 (10) ◽  
pp. 103501 ◽  
Author(s):  
Dongjo Kim ◽  
Chang Young Koo ◽  
Keunkyu Song ◽  
Youngmin Jeong ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Semiconductor ◽  
Amorphous Oxide ◽  
Amorphous Oxide Semiconductor ◽  
Semiconductor Thin Film
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