Surface Characterization of Low Energy Si Ion Implanted Graphene

2021 ◽  
pp. 151816
Author(s):  
Yifan Zhang ◽  
Yihan Wang ◽  
Yuan Gao ◽  
Xinwei Wang ◽  
Jianming Xue
1994 ◽  
Vol 237 (1-2) ◽  
pp. 175-180 ◽  
Author(s):  
Sanjeev Aggarwal ◽  
A.K. Goel ◽  
R.K. Mohindra ◽  
P.K. Ghosh ◽  
M.C. Bhatnagar

2003 ◽  
Vol 45 (9) ◽  
pp. 1951-1967 ◽  
Author(s):  
L Thair ◽  
U Kamachi Mudali ◽  
S Rajagopalan ◽  
R Asokamani ◽  
Baldev Raj

1998 ◽  
Vol 39 (7) ◽  
pp. 756-761 ◽  
Author(s):  
T. Sundararajan ◽  
U. Kamachi Mudali ◽  
K. G. M. Nair ◽  
S. Rajeswari ◽  
M. Subbaiyan

2003 ◽  
Vol 211 (1-4) ◽  
pp. 270-279 ◽  
Author(s):  
Iordan Karmakov ◽  
Ivan Chakarov ◽  
Anka Konova

Author(s):  
R. E. Herfert

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.


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