Conduction mechanisms in porous Si LEDs

2006 ◽  
Vol 6 (2) ◽  
pp. 174-178 ◽  
Author(s):  
Béla Szentpáli ◽  
Tibor Mohácsy ◽  
István Bársony
Keyword(s):  
Porous Si ◽  
Conduction Mechanisms

Study on Damp-proof and Enhanced Coating of Porous Si3N4 Surface

2008 ◽  
Vol 23 (4) ◽  
pp. 769-773 ◽  
Author(s):  
Shu-Bin WANG
Keyword(s):  
Porous Si

Biomimetic Synthesis of Porous Si3N4 Ceramics

2008 ◽  
Vol 23 (4) ◽  
pp. 763-768 ◽  
Author(s):  
Min LUO
Keyword(s):  
Biomimetic Synthesis ◽  
Porous Si

scholarly journals Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yijie Li ◽  
Nguyen Van Toan ◽  
Zhuqing Wang ◽  
Khairul Fadzli Bin Samat ◽  
Takahito Ono
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Power Factor ◽  
Chemical Etching ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates ◽  
Output Performance ◽  
Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

scholarly journals A practical Tamm plasmon sensor based on porous Si

AIP Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 065305
Author(s):  
Alexandre Juneau-Fecteau ◽  
Rémy Savin ◽  
Abderraouf Boucherif ◽  
Luc G. Fréchette
Keyword(s):  
Porous Si

scholarly journals MAPbI3 Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4385
Author(s):  
Ehsan Raza ◽  
Fakhra Aziz ◽  
Arti Mishra ◽  
Noora Jabor Al-Thani ◽  
Zubair Ahmad
Keyword(s):  
Carrier Transport ◽  
Solution Process ◽  
Electrical Characterization ◽  
Lead Iodide ◽  
Voltage Range ◽  
Conduction Mechanisms ◽  
Voltage Dependent ◽  
Conduction Behavior ◽  
Temperature Solution ◽  
Methylammonium Lead Iodide

The current work proposed the application of methylammonium lead iodide (MAPbI3) perovskite microrods toward photo resistor switches. A metal-semiconductor-metal (MSM) configuration with a structure of silver-MAPbI3(rods)-silver (Ag/MAPbI3/Ag) based photo-resistor was fabricated. The MAPbI3 microrods were prepared by adopting a facile low-temperature solution process, and then an independent MAPbI3 microrod was employed to the two-terminal device. The morphological and elemental compositional studies of the fabricated MAPbI3 microrods were performed using FESEM and EDS, respectively. The voltage-dependent electrical behavior and electronic conduction mechanisms of the fabricated photo-resistors were studied using current–voltage (I–V) characteristics. Different conduction mechanisms were observed at different voltage ranges in dark and under illumination. In dark conditions, the conduction behavior was dominated by typical trap-controlled charge transport mechanisms within the investigated voltage range. However, under illumination, the carrier transport is dominated by the current photogenerated mechanism. This study could extend the promising application of perovskite microrods in photo-induced resistor switches and beyond.

Enhancement of conductivity and conduction mechanisms in hybrid epoxy based nanocomposites for microelectronic applications

2021 ◽  
Vol 266 ◽  
pp. 115035
Author(s):  
S. Moussa ◽  
F. Namouchi ◽  
H. Guermazi ◽  
S. Guermazi
Keyword(s):  
Conduction Mechanisms

Effect of nano Cu coating on porous Si prepared by acid etching Al-Si alloy powder

2015 ◽  
Vol 161 ◽  
pp. 408-412 ◽  
Author(s):  
Chunli Li ◽  
Ping Zhang ◽  
Zhiyu Jiang
Keyword(s):  
Alloy Powder ◽  
Acid Etching ◽  
Porous Si

Comment on ‘‘In situ photoluminescence spectral study of porous Si in HF aqueous solution’’ [Appl. Phys. Lett. 65, 1653 (1994)]

1995 ◽  
Vol 66 (21) ◽  
pp. 2912-2913 ◽  
Author(s):  
M. Davison ◽  
K. P. O’Donnell ◽  
U. M. Noor ◽  
D. Uttamchandani ◽  
L. E. A. Berlouis
Keyword(s):  
Aqueous Solution ◽  
Spectral Study ◽  
Porous Si
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