AbstractOf all applications for which field emitter arrays (FEAs) are being designed, RF vacuum microelectronics is the most technically challenging application. The current density is typically three orders of magnitude larger than that required for displays (which require < 0.1 A/cm2). Due to their high current density capabilities and instant turn-on, FEAs may be a promising alternative to thermionic emitters for use in Inductive Output Amplifiers (IOAs). An analytical model of a field emitter is used to estimate Fowler Nordheim A and B parameters, effective resistance and capacitance of the array under several GHz modulation, signal propogation lengths, total current and current density, and effects of emitter non-uniformity on the basis of array geometry and materials. Estimates of inductance, resistance, and capacitance are made to estimate the drive power required to produce a bunched electron beam for Inductive Output Amplifier applications. An electronic efficiency of 32% with 15 dB gain may be possible from an array producing 260 mA peak, 71 mA average, current at 10 GHz using a TWT helix 1.51 cm long.
