Large grained and high charge carrier lifetime CH3NH3PbI3 thin-films: implications for perovskite solar cells

2017 ◽  
Vol 17 (10) ◽  
pp. 1335-1340 ◽  
Author(s):  
Arun Singh Chouhan ◽  
Naga Prathibha Jasti ◽  
Shreyash Hadke ◽  
Srinivasan Raghavan ◽  
Sushobhan Avasthi
2016 ◽  
Vol 6 (1) ◽  
Author(s):  
David Kiermasch ◽  
Philipp Rieder ◽  
Kristofer Tvingstedt ◽  
Andreas Baumann ◽  
Vladimir Dyakonov

2020 ◽  
Vol 4 (7) ◽  
pp. 3318-3325 ◽  
Author(s):  
Moon-Soo Lee ◽  
Saad Sarwar ◽  
Sunghyeok Park ◽  
Ullah Asmat ◽  
Dao Thi Thuy ◽  
...  

A bidentate Lewis base, pyrazine, acting as an efficient passivation agent to improve the charge-carrier lifetime and the efficiency of perovskite solar cells.


2011 ◽  
Vol 98 (19) ◽  
pp. 192106 ◽  
Author(s):  
Ruqiang Bao ◽  
Zijie Yan ◽  
Douglas B. Chrisey

2016 ◽  
Vol 61 (4) ◽  
pp. 1889-1894 ◽  
Author(s):  
P. Panek

Abstract The influence of a p-type Si with different resistivity, charge carrier lifetime and emitter dopant impurities concentration on the crystalline silicon solar cells parameters were analyzed and experimentally checked. The findings were determined by quasi-steady-state photoconductance, current-voltage and spectral response methods. The study was accompanied by solar device simulation using a numerical PC1D program. The highest photoconversion efficiency of 15.13 % was obtained for the moncrystalline (Cz-Si) solar cell with a base resistivity of 1.8 Ωcm and an effective charge carrier lifetime of 22.9 μs. The results clearly confirmed the importance concerning the dopant level in a Si base material in relation to open circuit voltage and short circuit current possible to obtain from the solar cell. Reduction of a base material resistivtiy leads to a lower value of an effective charge carrier lifetime and photoconversion efficiency both for Cz-Si and multicrystalline (mc-Si) solar cells. The experimental results and calculation showed, that in the case of a solar cell produced on the basis of crystalline silicon, the most important spectral range for an efficiency of a cell is covering a wavelength range of 587 ÷ 838 nm.


2016 ◽  
Vol 28 (44) ◽  
pp. 9839-9845 ◽  
Author(s):  
Daniel Pérez-del-Rey ◽  
Dávid Forgács ◽  
Eline M. Hutter ◽  
Tom J. Savenije ◽  
Dennis Nordlund ◽  
...  

2015 ◽  
Vol 6 (1) ◽  
pp. 402-411 ◽  
Author(s):  
Patrick E. Hartnett ◽  
Scott M. Dyar ◽  
Eric A. Margulies ◽  
Leah E. Shoer ◽  
Andrew W. Cook ◽  
...  

Self-ordering of covalent electron donor–acceptor building blocks in thin films upon solvent vapor annealing results in a 104 increase in photo-generated charge carrier lifetime.


Author(s):  
Ramsha Khan ◽  
Harri Ali-Löytty ◽  
Antti Tukiainen ◽  
Nikolai V Tkachenko

Polycrystalline titanium dioxide thin films are routinely used in a broad range of applications where charge carrier lifetime is essential to the performance but the effects of fabrication method are...


Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 647 ◽  
Author(s):  
Yujun Yao ◽  
Xiaoping Zou ◽  
Jin Cheng ◽  
Tao Ling ◽  
Chuangchuang Chang ◽  
...  

Traditional hetero-junction perovskite solar cells are composed of light-absorbing layers, charge carrier-transporting layers, and electrodes. Recently, a few papers on homo-junction perovskite solar cells have been studied. Here, we studied the effect of K+ doping on TiO2/PbI2 interface quality, perovskite film morphology, photo-physical properties, and majority carrier type. In particular, the K+ extrinsic doping can modulate the majority carrier type of the perovskite thin film. The study indicated that the interface between the perovskite layer and the TiO2 layer deteriorates with the increase of K+ doping concentration, affecting the electron transport ability from the perovskite film to the TiO2 layer and the photo-physical properties of the perovskite layer by K+ doping. In addition, the majority charge carrier type of perovskite thin films can be changed from n-type to p-type after K+ extrinsic doping, and the corresponding hole concentration increased to 1012 cm−3. This approach of modulating the majority charge carrier type of perovskite thin film will pave the way for the investigation of perovskite homo-junction by extrinsic doping for solar cells.


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