scholarly journals Li intercalation into multilayer graphene with controlled defect densities

Carbon Trends ◽  
2021 ◽  
pp. 100045
Author(s):  
Michal W. Ochapski ◽  
Derya Ataç ◽  
Johnny G.M. Sanderink ◽  
Alexey Y. Kovalgin ◽  
Michel P. de Jong
Keyword(s):  
Multilayer Graphene ◽  
Defect Densities

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

scholarly journals Multilayer graphene supported flexible optoelectronic devices

2020 ◽  
Author(s):  
Vera Marinova ◽  
Stefan Petrov ◽  
Blagovest Napoleonov ◽  
Jordan Mickovski ◽  
Dimitrina Petrova ◽  
...  
Keyword(s):  
Optoelectronic Devices ◽  
Multilayer Graphene

scholarly journals Vertical monolithic integration of wide- and narrow-bandgap semiconductor nanostructures on graphene films

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Youngbin Tchoe ◽  
Janghyun Jo ◽  
HoSung Kim ◽  
Heehun Kim ◽  
Hyeonjun Baek ◽  
...  
Keyword(s):  
Graphene Film ◽  
Monolithic Integration ◽  
Hybrid Nanostructures ◽  
Dual Wavelength ◽  
Multilayer Graphene ◽  
Graphene Films ◽  
Transmission Electron ◽  
Zno Nanotubes ◽  
Metal Organic ◽  
Hybrid Configuration

AbstractWe report monolithic integration of indium arsenide (InAs) nanorods and zinc oxide (ZnO) nanotubes using a multilayer graphene film as a suspended substrate, and the fabrication of dual-wavelength photodetectors with the hybrid configuration of these materials. For the hybrid nanostructures, ZnO nanotubes and InAs nanorods were grown vertically on the top and bottom surfaces of the graphene films by metal-organic vapor-phase epitaxy and molecular beam epitaxy, respectively. The structural, optical, and electrical characteristics of the hybrid nanostructures were investigated using transmission electron microscopy, spectral photoresponse analysis, and current–voltage measurements. Furthermore, the hybrid nanostructures were used to fabricate dual-wavelength photodetectors sensitive to both ultraviolet and mid-infrared wavelengths.

Multilayer graphene fundamental wave mixer under DC voltage bias

2021 ◽  
Author(s):  
Mingcan Cui ◽  
Xiaoling Zhong ◽  
Yong Fang ◽  
Haoxuan Sheng ◽  
Tingting Guo ◽  
...  
Keyword(s):  
Fundamental Wave ◽  
Multilayer Graphene ◽  
Dc Voltage ◽  
Voltage Bias

Multilayer graphene in situ formed in carbonized waste paper with the synergism of nickel and sodium

2021 ◽  
Author(s):  
Yao Cong ◽  
Qiaoran Jin ◽  
Qi Huang ◽  
Zijie Xu
Keyword(s):  
Waste Paper ◽  
Multilayer Graphene

Multilayer graphene (MLG) are in situ formed in matrix of amorphous carbons prepared from carbonized waste paper at 750 ℃. The resultant samples are systematically characterized by morphology, spectroscopy, diffractometry,...

scholarly journals Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Myungwoo Son ◽  
Jaewon Jang ◽  
Yongsu Lee ◽  
Jungtae Nam ◽  
Jun Yeon Hwang ◽  
...  
Keyword(s):  
High Performance ◽  
Direct Synthesis ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Time To Failure ◽  
Practical Applications ◽  
Cu Interconnects ◽  
Pressure Chemical ◽  
Cu Interconnect ◽  
Pure Cu

AbstractHere, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >106 s at 100 °C under a continuous DC stress of 3 MA cm−2. Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).

Thermal conductivity of hybrid multilayer graphene-fiber carbon membranes

2021 ◽  
Author(s):  
Jazael Gómez ◽  
Arturo Estrada ◽  
Argelia Balbuena Ortega ◽  
Oscar Arredondo ◽  
Rocío Nava ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Multilayer Graphene ◽  
Carbon Membranes
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