Rapid determination of reaction order and rate constants of an imine synthesis reaction using a mesoscale oscillatory baffled reactor

2013 ◽  
Vol 222 ◽  
pp. 282-291 ◽  
Author(s):  
Fatimah R. Mohd Rasdi ◽  
Anh N. Phan ◽  
Adam P. Harvey
2021 ◽  
Vol 43 (2) ◽  
pp. 125-134
Author(s):  
Damha Kim ◽  
In-Soung Chang

Objectives : Determination of reaction order (n) and rate constants (k) of the CaCO<sub>3</sub> scale formation reaction that was accelerated by the HVI (high voltage impulse) induction.Methods : HVI was inducted to the synthetic solution containing 2.5 mM of Ca<sup>2+</sup> ion at different temperatures of 25, 40, 60℃. The concentration of Ca<sup>2+</sup> ion has been monitored as voltages of the HVI increased from 0 to 5, 10, 15 kV. Reaction order and the rate constants of the CaCO<sub>3</sub> formation reaction were determined with the experimental dataset of Ca<sup>2+</sup> concentration vs. time plots.Results and Discussion : The CaCO<sub>3</sub> formation was determined to follow two-molecules 2<sup>nd</sup> order reaction. The reaction rate constant, k increased as temperature and the applied voltages of HVI increased. The rate constant, k at 25℃ and 15 kV of HVI was 8.2×10<sup>-3</sup> L/(mmol・hr), which was 2.7 times greater than the k of the control at 25℃, 3.0×10<sup>-3</sup> L/(mmol・hr).Conclusions : The reaction of CaCO<sub>3</sub> formation was accelerated by HVI as the applied voltages of HVI increased, indicating that the HVI could be used as an alternative desalting technology for scale control.


Author(s):  
T. Y. Tan ◽  
W. K. Tice

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.


2017 ◽  
Vol 45 (2) ◽  
pp. 455-464
Author(s):  
T.T. Xue ◽  
J. Liu ◽  
Y.B. Shen ◽  
G.Q. Liu

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